GP2T040A120H

$9.88

Description：SIC MOSFET 1200V 40M TO-247-4L
Series：-
Mfr：SemiQ
Package：Tube

SKU:a538ed359c9f Category: Single FETs, MOSFETs Brand: SemiQ

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Product introduction

Product Detailed Parameters

Description：SIC MOSFET 1200V 40M TO-247-4L
Series：-
Mfr：SemiQ
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：118 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：3192 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：322W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

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GP2T040A120H

Overview

The SemiQ GP2T040A120H is a single silicon carbide (SiC) MOSFET from the QSiC Gen2 series. It features a 1200V drain-source breakdown voltage and a typical on-resistance of 37mΩ at 25°C. The device supports a continuous drain current of 63A and operates within a junction temperature range of -55°C to +175°C. Packaged in a TO-247-4L, it offers enhanced thermal performance with a power dissipation rating of 322W.

Feature Summary

Utilizes second-generation planar gate technology for improved on-resistance compared to previous generations.
Designed for high-temperature operation with a maximum junction temperature of +175°C.
Enhancement mode channel configuration ensures reliable switching performance.

Applications

High-efficiency DC-DC converters
Industrial motor drives
Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific datasheet revision when ordering, as manufacturing updates may occur. Confirm that the TO-247-4L package pinout matches your PCB layout requirements. Ensure thermal management solutions are adequate for the 322W dissipation rating under your specific operating conditions. Check for any specific handling instructions regarding electrostatic discharge protection during assembly.

Selection Notes

Select this component when a 1200V SiC MOSFET with low on-resistance is required for high-frequency applications. The 37mΩ Rds(on) offers efficiency advantages over older 80mΩ variants. Consider the TO-247-4L package for its robust mechanical mounting and thermal characteristics. Evaluate the 63A current rating against peak load requirements to ensure safe operating area compliance.

Part Context

This part belongs to SemiQ's QSiC Gen2 series of silicon carbide MOSFETs. It represents an evolution from earlier 1200V offerings by reducing on-resistance while maintaining high voltage capability. The product line targets applications demanding superior thermal efficiency and switching speed compared to traditional silicon devices.

Replacement Considerations

Direct replacements should be sought among other 1200V, ~40mΩ SiC MOSFETs in TO-247-4L packages. Verify compatibility of gate charge parameters and thermal resistance values before substitution. Cross-reference with other manufacturers' equivalent voltage and current ratings to ensure functional parity.