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Product Detailed Parameters
- Description：IGBT NPT/TRENCH 1200V 30A TO-3PN
- Series：-
- Mfr：SemiQ
- Package：Tube
- IGBT Type：NPT and Trench
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：45 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 15A
- Power - Max：212 W
- Switching Energy：1.61mJ (on), 530µJ (off)
- Input Type：Standard
- Gate Charge：210 nC
- Td (on/off) @ 25°C：25ns/166ns
- Test Condition：600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：320 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3PN
- Grade：-
- Qualification：-
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Overview
The GPA015A120MN-ND is a Silicon Carbide (SiC) Schottky diode manufactured by SemiQ. It features a maximum reverse voltage of 1200V and a forward current rating of 15A. The device is housed in a TO-220 package, suitable for through-hole mounting. Key electrical characteristics include a typical forward voltage drop of approximately 1.65V at rated current. This component is designed for high-efficiency power conversion applications requiring low switching losses and high thermal stability.
Feature Summary
- High breakdown voltage capability for robust operation in high-voltage circuits
- Low forward voltage drop to minimize conduction losses
- Fast switching characteristics inherent to SiC technology
- Thermal stability suitable for demanding power environments
Applications
- High-frequency DC-DC converters
- Uninterruptible power supplies (UPS)
- Industrial motor drives
- Solar inverters
Procurement Notes
Verify the exact part number suffix against official SemiQ documentation to ensure correct pinout and thermal specifications. Confirm RoHS compliance status if required for specific regulatory standards. Check datasheet revisions for any updates to absolute maximum ratings or thermal resistance values before finalizing design integration.
Selection Notes
Select this component when designing circuits requiring high voltage isolation with minimal conduction loss. Ensure the thermal management solution can handle the specified power dissipation. Compare forward voltage characteristics against system efficiency targets. Verify that the TO-220 package fits within the mechanical constraints of the target enclosure.
Part Context
This component belongs to SemiQ's portfolio of wide-bandgap semiconductor devices. It complements other SiC diodes and MOSFETs in their product line, offering integrated solutions for power electronics. The GPA series typically denotes specific packaging and current rating combinations within their broader catalog.
Replacement Considerations
Direct substitutes must match the 1200V reverse voltage, 15A forward current, and TO-220 package. Verify equivalent forward voltage and switching speed parameters. Cross-reference thermal resistance values to ensure comparable performance under identical cooling conditions.
