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Product Detailed Parameters
- Description：IGBT NPT/TRENCH 1000V 60A TO-264
- Series：-
- Mfr：SemiQ
- Package：Tube
- IGBT Type：NPT and Trench
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 60A
- Power - Max：463 W
- Switching Energy：13.1mJ (on), 6.3mJ (off)
- Input Type：Standard
- Gate Charge：405 nC
- Td (on/off) @ 25°C：230ns/1480ns
- Test Condition：600V, 60A, 50Ohm, 15V
- Reverse Recovery Time (trr)：465 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264
- Grade：-
- Qualification：-
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Overview
The GPA042A100L-ND is an Insulated Gate Bipolar Transistor (IGBT) manufactured by SemiQ. It features a voltage rating of 1000V and a continuous collector current of 60A. The device has a maximum power dissipation of 463W at 25°C. It utilizes NPT and Trench technology for improved switching performance. The component is housed in a TO-264-3 through-hole package, designed for robust thermal management in high-power applications.
Feature Summary
- Utilizes NPT and Trench IGBT technology for optimized switching characteristics
- Designed for high-voltage operation with 1000V blocking capability
- Housed in a TO-264-3 package suitable for through-hole mounting
Applications
- High-power switching circuits
- Industrial motor drives
- Power supply units
Procurement Notes
Verify the specific manufacturer part number against official SemiQ documentation to ensure compatibility. Confirm that the TO-264-3 package dimensions match your PCB layout requirements. Check for RoHS compliance status if required by your manufacturing standards. Ensure thermal design accounts for the 463W dissipation limit under operating conditions.
Selection Notes
Select this component when a 1000V IGBT with 60A current capacity is required. Consider the TO-264-3 package for through-hole assembly needs. Evaluate thermal management solutions based on the 463W power dissipation specification. Compare switching speeds and saturation voltages against application requirements using official datasheets.
Part Context
This IGBT belongs to SemiQ's portfolio of power devices. SemiQ specializes in silicon carbide components but also offers standard silicon IGBTs. The GPA series indicates specific electrical characteristics within their lineup. The TO-264 package is common for medium-to-high power discrete transistors.
Replacement Considerations
Consult official cross-reference guides for compatible parts. Verify pinout compatibility and thermal resistance values before substitution. Ensure replacement devices meet or exceed the 1000V and 60A specifications.
