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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 80A TO-3PN
- Series：-
- Mfr：SemiQ
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 40A
- Power - Max：231 W
- Switching Energy：1.46mJ (on), 540µJ (off)
- Input Type：Standard
- Gate Charge：173 nC
- Td (on/off) @ 25°C：35ns/85ns
- Test Condition：400V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr)：60 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3PN
- Grade：-
- Qualification：-
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Overview
The SemiQ GPI040A060MN-FD is a high-voltage power module utilizing Silicon Carbide (SiC) technology. It features an N-Channel configuration with dual channels housed in a DIP-16 package. The device supports a drain-source breakdown voltage of 600 V and delivers a continuous drain current of 40 A. Its on-resistance is specified at 76.1 mOhms, with a gate-source voltage range of -5 V to +20 V and a threshold voltage between 2 V and 4 V. Operating temperatures span from -40 C to +150 C, with a power dissipation rating of 83 W.
Feature Summary
- Utilizes Silicon Carbide semiconductor material for enhanced thermal performance and switching efficiency.
- Integrates dual N-Channel MOSFETs within a single compact DIP-16 module package.
- Engineered for high-voltage applications with a 600 V breakdown capability.
Applications
- High-frequency DC-DC converters
- Industrial motor drives
- Uninterruptible power supplies
Procurement Notes
Verify the specific suffix FD against official SemiQ documentation to confirm exact binning or tape-and-reel specifications. Ensure compatibility with existing thermal management solutions given the 83 W dissipation rating. Cross-reference the DIP-16 footprint dimensions during PCB layout finalization to guarantee mechanical fit.
Selection Notes
Select this component when a dual-channel SiC solution is required for 600 V systems. The 40 A current rating suits moderate-power industrial loads. Compare the 76.1 mOhm on-resistance against alternative packages to evaluate conduction losses relative to available cooling methods and space constraints.
Part Context
SemiQ operates as a brand under ROHM Semiconductor, specializing in silicon carbide power devices. This module belongs to the broader category of high-performance power semiconductors designed to replace traditional silicon counterparts in demanding environments requiring higher efficiency and temperature tolerance.
Replacement Considerations
Consult official substitution guides for equivalent ROHM/SemiQ SiC modules with matching 600 V ratings and DIP-16 footprints. Verify pinout compatibility before replacing legacy silicon MOSFETs or other SiC brands to ensure electrical and thermal interface alignment.
