GPI65005DF68

Single FETs, MOSFETs Overview

The GPI65005DF68 is an N-channel enhancement-mode Gallium Nitride High Electron Mobility Transistor (HEMT) manufactured by GaNPower International Inc. It features a 650 V drain-source breakdown voltage and a typical on-state resistance of 235 mΩ at 25°C. The device operates with a gate threshold voltage of 1.25 V and supports a maximum DC drain current of 5 A. Key electrical parameters include a total gate charge of 1.6 nC, zero reverse recovery charge, and a maximum junction temperature rating of 150°C.

Single FETs, MOSFETs Feature Summary

• Ultra-low on-state resistance for superior power density
• Extremely low input capacitance enabling ultra-high switching frequencies
• Zero reverse recovery charge eliminating body diode issues
• High dv/dt capability for outstanding switching performance

Single FETs, MOSFETs Applications

• Switching Power Applications
• Server and Telecom Power Application
• EVOBC and DC-DC Converters
• UPS, Inverters, PV

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct package type and packaging method. Confirm that the required gate drive voltages and PCB layout guidelines are compatible with the device's high slew rate characteristics before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency and compact form factors in medium-voltage environments. Consider the positive temperature coefficient of Rds(on) which facilitates safe paralleling for higher current applications. Ensure thermal management accounts for the specified junction-to-case resistance values.

Single FETs, MOSFETs Part Context

This device belongs to the GaNPower HEMT family utilizing proprietary E-mode GaN on silicon technology. It is designed as a direct replacement candidate for silicon MOSFETs or IGBTs in applications demanding reduced switching losses and higher operating frequencies, though it requires specialized gate drivers due to distinct voltage requirements.

Single FETs, MOSFETs Replacement Considerations

GaN HEMTs are not pin-to-pin compatible with silicon MOSFETs or IGBTs. Specialized gate drivers and optimized PCB layouts are necessary to manage the high dv/dt slew rate and minimize circuit parasitics during substitution.

Single FETs, MOSFETs FAQ

Is an external Freewheeling Diode (FRD) required for inverter applications?

No, an FRD is not required because the GaN HEMT lacks inherent PN junction diodes that cause reverse recovery issues. The device can operate in both first and third quadrants.

Can multiple GPI65005DF68 devices be paralleled?

Yes, paralleling is encouraged due to the positive temperature coefficient of the on-resistance, which ensures balanced current sharing among devices.