GPI65030DFN

$12.75

Description：GANFET N-CH 650V 30A DFN8X8
Series：-
Mfr：GaNPower
Package：Tape & Reel (TR)

SKU:6851bfdc5bf9 Category: Single FETs, MOSFETs Brand: GaNPower

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

GPI65030DFN is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists GaNPower. Its product description is GANFET N-CH 650V 30A DFN8X8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GPI65030DFN

Description：GANFET N-CH 650V 30A DFN8X8
Series：-
Mfr：GaNPower
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：30A
Drive Voltage (Max Rds On, Min Rds On)：6V
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：1.2V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs：5.8 nC @ 6 V
Vgs (Max)：+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds：241 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

Single FETs, MOSFETs datasheet and documents for GPI65030DFN

GPI65030DFN

Single FETs, MOSFETs Overview

The GPI65030DFN is an N-channel 650V GaN Power HEMT in an 8x8mm DFN package. It features a typical RDS(on) of 55mΩ, continuous drain current of 30A, and gate charge of 5.8nC. The device offers a breakdown voltage of 650V, transient capability up to 800V, and operates with a maximum junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

Ultra-low on-state resistance for superior power density
High dv/dt capability supporting ultra-high switching frequencies
Extremely low input capacitance and zero reverse recovery charge

Single FETs, MOSFETs Applications

Switching power applications
Adapters
Quick chargers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against official documentation to confirm packaging quantity and reel specifications. Ensure compatibility with surface mount bottom-cooled requirements. Confirm that the selected variant meets the intended thermal management needs for the target application environment.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency and compact form factors. The 8x8mm DFN package facilitates reduced PCB footprint. Consider the 55mΩ on-resistance and 30A current rating when sizing thermal solutions for the intended power levels.

Single FETs, MOSFETs Part Context

This part belongs to the GaNPower International Inc. portfolio of E-mode GaN HEMTs. It utilizes proprietary technology to combine low on-state resistance with high switching speed. The device is designed for modern power conversion systems demanding high performance.