GPI65060DFN

Single FETs, MOSFETs Overview

The GPI65060DFN is an N-channel 650 V GaN Power HEMT in a DFN8x8 package. It features a typical RDS(on) of 25 mΩ, continuous drain current (Id) of 60 A, and gate charge (Qg) of 16 nC. The device has a breakdown voltage (BVdss) of 650 V, threshold voltage (Vgs(th)) of 1.2 V, and input capacitance (Ciss) of 420 pF. Maximum ratings include a transient breakdown voltage of 800 V, gate-source voltage range of -12 to +7.5 V, and junction temperature up to 150 °C.

Single FETs, MOSFETs Feature Summary

• Ultra-low on-state resistance for high efficiency
• High dv/dt capability with extremely low input capacitance
• Zero reverse recovery charge (Qrr)
• Outstanding switching performance

Single FETs, MOSFETs Applications

• Switching power applications
• Server and telecom power applications
• EV OBC and DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version and manufacturer documentation before integration. Confirm that the DFN8x8 package dimensions and thermal characteristics align with your PCB layout requirements. Ensure compatibility with recommended gate drivers and optimized layouts due to high slew rates. Check for any updates regarding RoHS compliance or material declarations from the official supplier.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring superior power density and ultra-high switching frequencies. The zero Qrr eliminates the need for external freewheeling diodes in certain topologies. Consider the negative gate-source rating (-12 V) when designing gate drive circuits to prevent damage during transients. Evaluate thermal management needs given the 62 °C/W junction-to-ambient resistance.

Single FETs, MOSFETs Part Context

This part belongs to the GaNPower International Inc. lineup of E-mode GaN HEMTs based on proprietary GaN-on-silicon technology. These devices are designed to replace silicon MOSFETs and IGBTs in high-frequency applications, offering lower conduction and switching losses. The DFN packaging facilitates compact board designs compared to traditional TO packages.

Single FETs, MOSFETs Replacement Considerations

GaN HEMTs are not direct pin-to-pin replacements for silicon MOSFETs or IGBTs due to different gate driving voltage requirements and high dv/dt sensitivity. Specialized gate drivers and optimized PCB layouts are necessary to minimize parasitic effects. Do not assume identical footprint compatibility without verifying mechanical dimensions.