GPIHV7DK

Description：GaNFET N-CH 1200V 7A TO252
Series：-
Mfr：GaNPower
Package：Tape & Reel (TR)

SKU:15fc08a37e96 Category: Single FETs, MOSFETs Brand: GaNPower

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Product introduction

GPIHV7DK is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists GaNPower. Its product description is GaNFET N-CH 1200V 7A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GPIHV7DK

Description：GaNFET N-CH 1200V 7A TO252
Series：-
Mfr：GaNPower
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：7A
Drive Voltage (Max Rds On, Min Rds On)：6V
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：1.7V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs：3.1 nC @ 6 V
Vgs (Max)：+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds：90 pF @ 700 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for GPIHV7DK

GPIHV7DK

Single FETs, MOSFETs Overview

The GPIHV7DK is an N-channel 1200V GaN Power HEMT in a TO-252 package. It features a maximum drain-source breakdown voltage of 1200V and a continuous drain current of 7A at 25°C. The device exhibits an ultra-low on-state resistance (Rdson) of 158 mΩ and extremely low input capacitance (Ciss) of 90 pF. Gate charge (Qg) is 3.1 nC, with zero reverse recovery charge (Qrr). Operating temperature ranges from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Ultra-low on-state resistance for superior power density
High dv/dt capability with extremely low input capacitance
Zero reverse recovery charge eliminating body diode issues
Outstanding switching performance suitable for high-frequency applications

Single FETs, MOSFETs Applications

Switching Power Applications
Server and Telecom Power Application
EV OBC and DC-DC Converters
UPS, Inverters, PV

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version prior to procurement, as the provided documentation indicates this is a preliminary release. Confirm that the TO-252 packaging aligns with your PCB footprint requirements. Ensure gate drive circuits are optimized for the device's high dv/dt characteristics and low threshold voltage to prevent false triggering.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring high efficiency and compact form factors. The 1200V rating suits medium-voltage topologies. Consider the negative gate voltage tolerance (-12V) for robust turn-off. Evaluate thermal management needs given the junction-to-ambient resistance, ensuring adequate copper area for heat dissipation in surface-mount layouts.

Single FETs, MOSFETs Part Context

This part belongs to GaNPower's E-mode GaN on silicon technology lineup. It replaces traditional silicon MOSFETs or IGBTs in applications demanding higher switching frequencies. The TO-252 package provides a balance between thermal performance and mounting convenience compared to smaller DFN packages.

Single FETs, MOSFETs Replacement Considerations

Direct pin-to-pin replacement with silicon devices is not recommended due to different gate driving requirements and high slew rates. Designers must implement specialized drivers and optimized PCB layouts to manage parasitic inductance effectively.

Single FETs, MOSFETs FAQ

Does the GPIHV7DK require an external freewheeling diode?

No, the device operates in both first and third quadrants without inherent PN junction reverse recovery issues. However, dead time power loss should be managed due to its Vsd voltage.