FET, MOSFET Arrays GSFCP0212 product image

GSFCP0212

$0.80
  • Description:MOSFET 20V 12A 6CSP
  • Series:-

SKU:7967f71de282 Category: Brand:

  
  • Quantity
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GSFCP0212 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET 20V 12A 6CSP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GSFCP0212

  • Description:MOSFET 20V 12A 6CSP
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:-
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta)
  • Rds On (Max) @ Id, Vgs:6.8mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:34.7nC @ 6V
  • Input Capacitance (Ciss) (Max) @ Vds:2609pF @ 10V
  • Power - Max:2W (Ta)
  • Operating Temperature:150°C
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, No Lead
  • Supplier Device Package:6-CSP (2.15x1.66)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for GSFCP0212

GSFCP0212

FET, MOSFET Arrays Overview

The GSFCP0212 is a dual N-channel MOSFET from Good-Ark Semiconductor, designed for high-efficiency switched-mode power supplies. It features an advanced process technology achieving low on-resistance and gate charge. Key electrical parameters include a source-source breakdown voltage of 20V, a continuous source current of 12A, and a pulsed source current of 120A. The device operates within a junction temperature range up to +150°C and a storage temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Advanced MOSFET process technology enabling high cell density
  • Low on-resistance combined with low gate charge for efficiency
  • Fast switching capabilities and reverse body recovery
  • Embedded ESD diodes for load switch and battery protection applications

FET, MOSFET Arrays Applications

  • High efficiency switched mode power supplies
  • Load switch circuits
  • Battery protection systems

FET, MOSFET Arrays Procurement Notes

Verify the specific package type CSP against your PCB footprint requirements before ordering. Confirm that the absolute maximum ratings, particularly the 20V breakdown voltage and 12A continuous current limits, align with your circuit design constraints. Ensure thermal management strategies account for the specified junction temperature range during operation.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel configuration is required for low-voltage applications. The low on-resistance at various gate voltages makes it suitable for efficient power conversion. Consider the CSP package dimensions and recommended pad layout for proper integration into space-constrained designs requiring fast switching performance.

FET, MOSFET Arrays Part Context

This part belongs to the dual MOSFET category, specifically utilizing N-channel technology. It is manufactured by Good-Ark Semiconductor using their advanced process techniques. The device integrates two independent channels in a single CSP package, offering a solution for applications needing multiple switches or complementary functions in a minimal footprint.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

GSFCP0212GSFCP0212
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