GSFJ0300

$0.27

Description：MOSFET, N-CH, DUAL, 0.60A, 30V,
Series：-

SKU:6914122665e2 Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

GSFJ0300 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, N-CH, DUAL, 0.60A, 30V,. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GSFJ0300

Description：MOSFET, N-CH, DUAL, 0.60A, 30V,
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
Rds On (Max) @ Id, Vgs：450mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：65pF @ 15V
Power - Max：313mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for GSFJ0300

GSFJ0300

FET, MOSFET Arrays Overview

The GSFJ0300 is a dual N-channel MOSFET from Good-Ark Semiconductor, housed in an SOT-563 package. It features a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 600 mA at 25°C. The on-resistance (RDS(on)) is typically 450 mΩ at VGS=4.5V. Gate threshold voltage (VGS(th)) ranges from 0.5 V to 1.2 V. Total gate charge (Qg) is typically 2.6 nC. Power dissipation is 313 mW at 25°C ambient temperature. Operating junction temperature spans -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration within a compact SOT-563 surface-mount package
Advanced process technology enabling high cell density and low on-resistance
Optimized for fast switching speeds and reverse body recovery characteristics

FET, MOSFET Arrays Applications

High efficiency switched mode power supplies
Low voltage DC-DC converter circuits
Battery protection modules

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer designation as Good-Ark Semiconductor when sourcing components. Confirm that the datasheet version matches the required electrical tolerances for your design. Ensure the SOT-563 footprint aligns with your PCB layout specifications before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual channel control in minimal space. The low gate charge supports efficient drive requirements. Verify thermal management capabilities against the specified power dissipation limits under your expected operating conditions.

FET, MOSFET Arrays Part Context

This device belongs to the category of dual N-channel MOSFETs designed for low-voltage switching applications. It utilizes advanced silicon process technology to achieve performance metrics suitable for modern portable electronics and power management systems.

FET, MOSFET Arrays Replacement Considerations

Check pinout compatibility and package dimensions when substituting. Verify that replacement parts meet or exceed the 30 V breakdown voltage and 600 mA current ratings.