GSFK0501

$0.30

Description：MOSFET 50V 0.13A SOT363
Series：-

SKU:61b23e676444 Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

GSFK0501 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET 50V 0.13A SOT363. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GSFK0501

Description：MOSFET 50V 0.13A SOT363
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：56pF @ 20V
Power - Max：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for GSFK0501

GSFK0501

FET, MOSFET Arrays Overview

The GSFK0501 is a dual P-channel MOSFET with a -50V drain-source voltage and -130mA continuous drain current. It features a maximum on-resistance of 10Ω at VGS=-5V and ID=-0.1A, with a typical value of 2.1Ω. The device has a gate threshold voltage ranging from -0.8V to -2V. Input capacitance is typically 56pF, output capacitance 17pF, and reverse transfer capacitance 5pF. Power dissipation is 0.3W in an SOT-363 package.

FET, MOSFET Arrays Feature Summary

Dual P-channel configuration for compact integration
Low on-resistance with low gate charge
Fast switching and reverse body recovery

FET, MOSFET Arrays Applications

High efficiency switch mode power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and carrier quantity against the manufacturer's official documentation before procurement. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the SOT-363 package dimensions match the design requirements.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual P-channel switches in a small footprint. Consider the 10Ω maximum on-resistance limit for low-current switching tasks. Verify that the -50V breakdown voltage meets the circuit's voltage requirements. Check thermal resistance values if operating near maximum power dissipation limits.

FET, MOSFET Arrays Part Context

This part belongs to the family of dual MOSFETs designed for space-constrained surface mount applications. It utilizes advanced process technology to achieve high cell density. The SOT-363 package allows for efficient board space utilization compared to discrete single transistors.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives with similar -50V ratings and comparable RDS(ON) specifications in the SOT-363 package. Verify electrical characteristics match the original design requirements.