GSFK06002

$0.27

Description：MOSFET 2N-CH 50V 0.3A SOT363
Series：-

SKU:531ae74c7625 Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

GSFK06002 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET 2N-CH 50V 0.3A SOT363. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GSFK06002

Description：MOSFET 2N-CH 50V 0.3A SOT363
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Rds On (Max) @ Id, Vgs：2Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：580nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：12pF @ 30V
Power - Max：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for GSFK06002

GSFK06002

FET, MOSFET Arrays Overview

The GSFK06002 is a dual N-channel MOSFET in an SOT-363 package. It features a drain-source voltage of 50 V and continuous drain current of 0.3 A at 25°C. Typical on-resistance is 1.3 Ω at VGS=10V and 1.6 Ω at VGS=4.5V. Gate charge is typically 0.58 nC, with input capacitance of 12 pF. Power dissipation reaches 0.9 W at 70°C. Operating temperature ranges from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Advanced MOSFET process technology for high cell density
Low on-resistance combined with low gate charge
Fast switching capability with reverse body recovery

FET, MOSFET Arrays Applications

High efficiency switched mode power supplies
General purpose switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer datasheet version against the requested component revision. Confirm that the SOT-363 package dimensions match the design footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.

FET, MOSFET Arrays Selection Notes

Select this component for low-current dual-channel applications requiring compact surface-mount packaging. The device offers balanced performance between conduction losses and switching speed suitable for small form factor designs. Evaluate thermal constraints carefully due to the limited power dissipation rating in the small outline package.

FET, MOSFET Arrays Part Context

This dual N-channel MOSFET integrates two independent channels within a single SOT-363 package. It utilizes advanced process technology to achieve high cell density. The design targets efficiency improvements in switch mode power supplies by minimizing on-resistance while maintaining fast switching characteristics.