GSFN0232

$0.76

Description：MOSFET 20V 32A 6DFN
Series：-

SKU:df433b90ddae Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

GSFN0232 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET 20V 32A 6DFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GSFN0232

Description：MOSFET 20V 32A 6DFN
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：32A (Ta)
Rds On (Max) @ Id, Vgs：6.7mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1180pF @ 15V
Power - Max：20W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-WFDFN Exposed Pad
Supplier Device Package：6-DFN (2x3)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for GSFN0232

GSFN0232

FET, MOSFET Arrays Overview

The GSFN0232 is a dual N-channel MOSFET from Good-Ark Semiconductor, housed in a DFN2X3 package. It features a drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 32A at 25°C case temperature. The device achieves a low on-resistance (RDS(ON)) of 6.7mΩ at VGS=4.5V and ID=5.5A. Key electrical parameters include a gate threshold voltage (VGS(th)) ranging from 0.5V to 1.5V, total gate charge (Qg) of 19.9nC typ., and reverse recovery time (Trr) of 670ns. Thermal resistance junction-to-ambient is 62°C/W, with a maximum operating junction temperature of +150°C.

FET, MOSFET Arrays Feature Summary

Advanced MOSFET process technology for high cell density
Low on-resistance combined with low gate charge
Fast switching and reverse body diode recovery characteristics

FET, MOSFET Arrays Applications

High efficiency switched mode power supplies
General purpose power management applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging quantities and tape-and-reel specifications. Confirm RoHS compliance status and long-term availability plans directly with Good-Ark Semiconductor or authorized distributors before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a compact dual N-channel configuration within a DFN2X3 footprint. Ensure the application operates within the 20V drain-source voltage limit and accounts for thermal derating above 25°C case temperature. Verify that the required gate drive voltage aligns with the specified RDS(ON) test conditions for optimal performance.

FET, MOSFET Arrays Part Context

This part belongs to the family of dual N-channel MOSFETs offered by Good-Ark Semiconductor. These devices are engineered to provide efficient power switching solutions in minimal surface area packages. The dual configuration allows for independent control of two channels within a single compact housing, suitable for space-constrained electronic designs.