Single FETs, MOSFETs GSFN3908 product image

GSFN3908

$0.37
  • Description:MOSFET, N-CH, SINGLE, 48A, 30V,
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:76aadc9a840a Category: Brand:

  
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GSFN3908 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, N-CH, SINGLE, 48A, 30V,. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GSFN3908

  • Description:MOSFET, N-CH, SINGLE, 48A, 30V,
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:8.5mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):35W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-PPAK (3.1x3.05)
  • Package / Case:8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for GSFN3908

GSFN3908

Single FETs, MOSFETs Overview

The GSFN3908 is a 30V N-Channel MOSFET manufactured by Good-Ark Semiconductor, designed for high-efficiency switch mode power supplies. It features an advanced MOSFET process technology that achieves high cell density and low on-resistance. The device offers a continuous drain current of 48A at a case temperature of 25°C and a maximum on-state resistance of 7.8mΩ at VGS=10V. Key electrical parameters include a gate threshold voltage ranging from 1.2V to 2.5V, total gate charge up to 12nC, and a single pulse avalanche energy rating of 45mJ. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes advanced MOSFET process technology to achieve high cell density and low on-resistance.
  • Optimized for high efficiency in switched mode power supply applications.
  • Features fast switching capabilities and reverse body recovery characteristics.

Single FETs, MOSFETs Applications

  • High efficiency switch mode power supplies
  • General purpose power management circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested quantity aligns with the standard tape and reel carrier specifications provided by Good-Ark Semiconductor. Cross-reference the part marking code DC3908 with physical samples during incoming inspection to validate authenticity and manufacturing date codes.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 30V N-Channel MOSFET with high current handling capabilities. Ensure the thermal design accommodates the specified power dissipation limits at the expected operating case temperature. Verify that the gate drive voltage meets the requirements for achieving the minimum on-resistance specifications listed in the datasheet.

Single FETs, MOSFETs Part Context

The GSFN3908 belongs to the discrete semiconductor product category, specifically within the single N-channel MOSFET segment produced by Good-Ark Semiconductor. It is housed in a PPAK 3x3 surface mount package, which facilitates efficient thermal management and compact board layout. This component is part of the manufacturer's portfolio aimed at improving power conversion efficiency.

Single FETs, MOSFETs Replacement Considerations

Consult the official Good-Ark Semiconductor replacement guide or contact technical support directly for verified substitute part numbers. Do not assume pin-compatible alternatives without verifying absolute maximum ratings and electrical performance parameters against the original specifications.

Single FETs, MOSFETs FAQ

What is the maximum single pulse avalanche energy (EAS) rating?

The GSFN3908 has a guaranteed single pulse avalanche energy rating of 45mJ under specific test conditions.

How does the on-resistance vary with gate-source voltage?

The typical on-resistance is 6.5mΩ at VGS=10V and increases to a typical value of 9.2mΩ at VGS=4.5V.

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