FET, MOSFET Arrays GSFQ4616 product image

GSFQ4616

$0.32
  • Description:MOSFET N/P-CH 30V 8A 8SOP
  • Series:-

SKU:b6497167325c Category: Brand:

  
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GSFQ4616 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET N/P-CH 30V 8A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GSFQ4616

  • Description:MOSFET N/P-CH 30V 8A 8SOP
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel Complementary
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:8A (Tc), 7A (Tc)
  • Rds On (Max) @ Id, Vgs:20mOhm @ 8A, 10V, 22mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA, 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V, 18.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:740pF @ 15V, 1040pF @ 15V
  • Power - Max:2W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for GSFQ4616

GSFQ4616

FET, MOSFET Arrays Overview

The GSFQ4616 is a 30V N-Channel and P-Channel complementary MOSFET in an SOP-8 package. The N-Channel device features a maximum on-resistance of 20mΩ at VGS=10V and a continuous drain current of 8A. The P-Channel counterpart has a maximum on-resistance of 22mΩ at VGS=-10V and a continuous drain current of -7A. Both channels support a gate-source voltage of ±20V and operate within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Complementary N-Channel and P-Channel configuration in a single SOP-8 package
  • Advanced process technology for high cell density and low on-resistance
  • Fast switching and reverse body recovery characteristics
  • Low gate charge for improved efficiency

FET, MOSFET Arrays Applications

  • High efficiency switch mode power supplies
  • DC-DC converters
  • Power distribution circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and reel quantity against the manufacturer's official documentation before procurement. Confirm RoHS compliance status and HSF requirements with the supplier. Ensure the SOP-8 package dimensions match the design constraints. Check for any recent product discontinuation notices or lifecycle changes directly from Good-Ark Semiconductor.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a compact complementary MOSFET pair with low on-resistance. The SOP-8 package suits space-constrained designs. Evaluate thermal performance based on the specified junction-to-ambient resistance. Consider the gate charge values for driving circuit requirements. Verify that the 30V breakdown voltage meets the system's voltage headroom needs.

FET, MOSFET Arrays Part Context

The GSFQ4616 belongs to Good-Ark Semiconductor's complementary MOSFET lineup, designed for high-efficiency power management. It integrates both N-Channel and P-Channel devices into one package to save board space. The device utilizes advanced MOSFET process technology to achieve low on-resistance and fast switching speeds suitable for modern power supply applications.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided datasheet.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the N-Channel?

The maximum continuous drain current for the N-Channel is 8A at Tc=25°C.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to +150°C.

Does the device include a built-in body diode?

Yes, the datasheet specifies Drain-Source Diode Characteristics, indicating the presence of a body diode.

GSFQ4616GSFQ4616
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