FET, MOSFET Arrays GSFQ6806 product image

GSFQ6806

$0.92
  • Description:MOSFET 2N-CH 60V 20A 8SOP
  • Series:-

SKU:1fee51516f1e Category: Brand:

  
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GSFQ6806 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET 2N-CH 60V 20A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GSFQ6806

  • Description:MOSFET 2N-CH 60V 20A 8SOP
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:20A (Tc)
  • Rds On (Max) @ Id, Vgs:28mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2440pF @ 20V
  • Power - Max:2.1W (Tc)
  • Operating Temperature:-50°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for GSFQ6806

GSFQ6806

FET, MOSFET Arrays Overview

The GSFQ6806 is a dual N-channel MOSFET manufactured by Good-Ark Semiconductor, designed for high-efficiency switched-mode power supplies. It features a 60V drain-source voltage rating and supports a continuous drain current of 20A at 25°C case temperature. The device exhibits a typical on-resistance of 28mΩ at VGS=10V and ID=20A. Packaged in an SOP-8 format, it integrates two independent channels within a single component to optimize board space.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration with integrated reverse body diodes
  • Advanced MOSFET process technology for high cell density
  • Low on-resistance combined with low gate charge characteristics
  • Fast switching performance with reverse body recovery capabilities

FET, MOSFET Arrays Applications

  • High efficiency switched mode power supplies
  • DC-DC converter circuits
  • Power management modules requiring compact dual-channel solutions

FET, MOSFET Arrays Procurement Notes

Verify the specific package variant matches the SOP-8 outline dimensions provided in the datasheet. Confirm that thermal management strategies account for the junction-to-ambient resistance values under actual operating conditions. Ensure sourcing channels provide authentic components from Good-Ark Semiconductor or authorized distributors to maintain reliability standards.

FET, MOSFET Arrays Selection Notes

Select this component when a dual-channel solution is required within a limited footprint. The 60V rating suits low-voltage DC-DC applications. Evaluate the 28mΩ on-resistance against conduction loss requirements. Consider the SOP-8 package for surface-mount assembly compatibility and verify thermal dissipation needs against the specified power ratings.

FET, MOSFET Arrays Part Context

This part belongs to Good-Ark Semiconductor's lineup of dual MOSFETs. It utilizes advanced processing techniques to achieve high cell density. The design targets efficiency improvements in power conversion systems. The dual-channel architecture allows for synchronized operations or parallel configurations in compact designs.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the GSFQ6806?

The maximum continuous drain current is 20A at a case temperature of 25°C.

Does the GSFQ6806 include internal diodes?

Yes, each channel includes an integrated reverse body diode with specified forward voltage and reverse recovery characteristics.

What is the typical gate threshold voltage range?

The gate threshold voltage typically ranges from 1.2V to 2.5V under standard test conditions.

GSFQ6806GSFQ6806
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