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GSFQ6806 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET 2N-CH 60V 20A 8SOP. Review the specifications below when checking this part for your BOM.
The GSFQ6806 is a dual N-channel MOSFET manufactured by Good-Ark Semiconductor, designed for high-efficiency switched-mode power supplies. It features a 60V drain-source voltage rating and supports a continuous drain current of 20A at 25°C case temperature. The device exhibits a typical on-resistance of 28mΩ at VGS=10V and ID=20A. Packaged in an SOP-8 format, it integrates two independent channels within a single component to optimize board space.
Verify the specific package variant matches the SOP-8 outline dimensions provided in the datasheet. Confirm that thermal management strategies account for the junction-to-ambient resistance values under actual operating conditions. Ensure sourcing channels provide authentic components from Good-Ark Semiconductor or authorized distributors to maintain reliability standards.
Select this component when a dual-channel solution is required within a limited footprint. The 60V rating suits low-voltage DC-DC applications. Evaluate the 28mΩ on-resistance against conduction loss requirements. Consider the SOP-8 package for surface-mount assembly compatibility and verify thermal dissipation needs against the specified power ratings.
This part belongs to Good-Ark Semiconductor's lineup of dual MOSFETs. It utilizes advanced processing techniques to achieve high cell density. The design targets efficiency improvements in power conversion systems. The dual-channel architecture allows for synchronized operations or parallel configurations in compact designs.
The maximum continuous drain current is 20A at a case temperature of 25°C.
Yes, each channel includes an integrated reverse body diode with specified forward voltage and reverse recovery characteristics.
The gate threshold voltage typically ranges from 1.2V to 2.5V under standard test conditions.
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