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Product Detailed Parameters
- Description：IGBT MOD 1200V 170A 650W
- Series：-
- Mfr：SemiQ
- Package：Bulk
- IGBT Type：-
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 100A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：170 A
- Power - Max：650 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：13.7 nF @ 25 V
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Overview
The GSID100A120S5C1 is a Silicon Carbide (SiC) IGBT module manufactured by SemiQ. It features a 1200V collector-emitter breakdown voltage and supports a continuous DC collector current of 100A. The device utilizes an SMD/SMT installation style within a TO-247-3 package configuration. Key electrical parameters include a gate-emitter voltage range of -20V to +20V, a saturated collector-emitter voltage between 1.90V and 2.30V, and a maximum power dissipation of 650W. The operational temperature range spans from -40°C to +175°C junction temperature.
Feature Summary
- Utilizes Silicon Carbide (SiC) technology for high-efficiency switching
- Designed with a three-phase inverter configuration topology
- Supports high thermal performance with a junction temperature up to 175°C
Applications
- Three-phase inverter circuits
- Industrial motor drives
- Power conversion systems
Procurement Notes
Verify the specific datasheet version before procurement as product status may vary. Confirm that the TO-247-3 package dimensions match the target PCB layout. Ensure gate drive signals comply with the specified -20V to +20V limits to prevent device damage. Cross-reference the manufacturer's latest documentation for any updates to pinout or thermal characteristics.
Selection Notes
Select this component for applications requiring robust high-voltage handling and elevated thermal stability. The SiC material offers advantages over traditional silicon in high-frequency environments. Consider the 650W power dissipation rating when designing heat sinking solutions. Verify compatibility with existing control logic regarding the gate threshold and saturation voltage levels.
Part Context
This part belongs to SemiQ's discrete semiconductor portfolio, specifically within the IGBT module category. It is engineered for power electronics demanding high reliability under extreme conditions. The TO-247-3 form factor allows for efficient mounting on heatsinks while maintaining compact system footprints compared to larger industrial modules.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official distributor catalogs for cross-referencing alternatives with matching voltage, current, and package specifications.
