GT016N10TL

$4.27

Description：MOSFET N-CH 100V 362A TOLL-8
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4fb771ccb1dc Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

GT016N10TL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N-CH 100V 362A TOLL-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GT016N10TL

Description：MOSFET N-CH 100V 362A TOLL-8
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：362A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：165 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：10037 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：450W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TOLL-8L
Package / Case：8-PowerSFN

Single FETs, MOSFETs datasheet and documents for GT016N10TL

GT016N10TL

Single FETs, MOSFETs Overview

The GT016N10TL is an N-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve excellent RDS(ON) and low gate charge characteristics. The device features a TOLL-8L package, providing a small form factor with high current carrying capacity. Key electrical parameters include a Drain-Source Voltage (VDS) of 100 V, a Continuous Drain Current (ID) of 362 A at TC = 25ºC, and a maximum On-Resistance (RDS(ON)) of less than 1.6 mΩ at VGS = 10V. It supports a Pulsed Drain Current (IDM) of 1448 A and operates within a junction temperature range of -55 to 150 ºC.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for optimized conduction and switching performance
High current density capability in a compact TOLL-8L package
100% avalanche tested for enhanced ruggedness

Single FETs, MOSFETs Applications

Power switches
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details, as standard reels may contain 2000 pieces per reel. Ensure compatibility with the TOLL-8L footprint during PCB layout. Confirm RoHS compliance status if required by specific environmental regulations. Cross-reference the manufacturer part number GT016N10TL with authorized distributors to ensure authenticity.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high continuous current handling in a small surface-mount footprint. The low on-resistance minimizes conduction losses, while the robust avalanche rating supports inductive load switching. Evaluate thermal management requirements based on the junction-to-case thermal resistance of 0.33 ºC/W for optimal heat dissipation in dense power designs.

Single FETs, MOSFETs Part Context

This device belongs to the Goford Semiconductor power MOSFET portfolio, designed for efficient power conversion. The TOLL-8L package offers superior thermal performance compared to traditional SO-8 packages due to its exposed copper pad design. It is engineered to meet the demands of modern power supplies and data center infrastructure where space and efficiency are critical constraints.