GT060N04D52

FET, MOSFET Arrays Overview

The GT060N04D52 is a dual N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 62A at case temperature. The maximum on-resistance (RDS(on)) is specified as 6.5mΩ. It is housed in an 8-DFN surface-mount package with dimensions of 4.9x5.75mm, designed for high thermal performance and compact circuit layouts.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a single compact package
• Advanced trench technology for optimized switching performance
• Low gate charge characteristics for efficient drive requirements
• High current carrying capacity suitable for dense power designs

FET, MOSFET Arrays Applications

• Power switches
• DC/DC converters
• General-purpose power regulation circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications when sourcing components. Confirm that the supplier provides official datasheets matching the GT060N04D52 designation to ensure compatibility with design requirements. Check for any regional distribution restrictions or authenticity guarantees from authorized channels before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel isolation in a small footprint. The 40V rating and 62A current capability make it suitable for low-voltage, high-current DC/DC conversion stages. Ensure thermal management strategies account for the DFN package's heat dissipation characteristics during high-load operations.

FET, MOSFET Arrays Part Context

This part belongs to Goford Semiconductor's lineup of silicon MOSFETs utilizing trench technology. It is distinct from their SiC and GaN offerings, focusing on cost-effective solutions for consumer and industrial markets. The dual-channel architecture allows for simplified board space usage compared to discrete single-channel alternatives.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with other dual N-channel MOSFETs in the 40V, 60A+ range from manufacturers like Infineon or ON Semiconductor. Verify pinout compatibility and thermal pad configurations to ensure direct replacement feasibility without PCB redesign.