GT090N06D52

$0.35

Description：MOSFET 2N-CH 60V 40A 8DFN
Series：SGT

SKU:94511301c0d8 Category: FET, MOSFET Arrays Brand: Goford Semiconductor

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Product introduction

GT090N06D52 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET 2N-CH 60V 40A 8DFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GT090N06D52

Description：MOSFET 2N-CH 60V 40A 8DFN
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Rds On (Max) @ Id, Vgs：14mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1011pF @ 30V
Power - Max：62W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：8-DFN (4.9x5.75)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for GT090N06D52

GT090N06D52

FET, MOSFET Arrays Overview

The GT090N06D52 is a dual N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a 60V drain-source voltage rating and supports a continuous drain current of 40A at 25°C case temperature. Key electrical parameters include an on-resistance of less than 14mΩ at VGS=10V and 18mΩ at VGS=4.5V. Total gate charge is typically 22nC. The component is housed in a DFN5X6 package with a junction-to-case thermal resistance of 2°C/W.

FET, MOSFET Arrays Feature Summary

Advanced trench technology provides excellent on-resistance characteristics and low gate charge for efficient switching.
Identical low-side and high-side switch configuration ensures balanced performance within the dual channel architecture.
100% avalanche tested to ensure reliability under transient energy stress conditions.

FET, MOSFET Arrays Applications

Power switching circuits
DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision (A1348.06-V1.3) matches your design requirements. Confirm that the DFN5X6-8L package dimensions align with your PCB footprint. Ensure thermal management strategies account for the specified junction-to-case resistance during operation.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a dual N-channel configuration with low conduction losses. The 60V rating suits medium-voltage DC-DC conversion tasks. Verify that the gate drive voltage meets the threshold requirements for optimal RDS(ON) performance, particularly if operating below 10V.

FET, MOSFET Arrays Part Context

This part belongs to the Goford Semiconductor power MOSFET lineup designed for general-purpose switching applications. The dual configuration allows for compact designs in half-bridge or synchronous rectifier topologies. The DFN5X6 package offers a small footprint suitable for space-constrained electronics.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer cross-reference lists for verified alternatives.