GT095N04D3

$0.56

Description：MOSFET N-CH 40V 47A DFN3*3-8L
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b99e944874be Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

GT095N04D3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N-CH 40V 47A DFN3*3-8L. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GT095N04D3

Description：MOSFET N-CH 40V 47A DFN3*3-8L
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：947 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：22.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (3.15x3.05)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for GT095N04D3

GT095N04D3

Single FETs, MOSFETs Overview

The GT095N04D3 is an N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a 40V drain-source voltage rating and supports a continuous drain current of 47A at 25°C case temperature. Key electrical parameters include a maximum RDS(on) of 6mΩ at VGS=10V and 9.5mΩ at VGS=4.5V. Total gate charge is typically 23nC. The component is housed in a DFN3X3-8L package with a junction-to-case thermal resistance of 5.5°C/W.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for low conduction loss
Highly efficient switching performance
100% avalanche tested for reliability

Single FETs, MOSFETs Applications

Power switches
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as packaging quantities may vary. Confirm that the requested part number matches the exact electrical specifications required for the target circuit design. Ensure compliance with RoHS standards and UL 94 V-0 flammability ratings if applicable to the end application requirements.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling in compact footprints. Evaluate thermal management needs based on the specified junction-to-ambient resistance. Consider the gate charge characteristics when designing drive circuits to optimize switching speeds and minimize driver losses.

Single FETs, MOSFETs Part Context

This part belongs to Goford Semiconductor's lineup of N-channel enhancement mode power MOSFETs. These devices are engineered using trench technology to deliver superior performance metrics compared to standard planar structures. The product line targets efficiency improvements in modern power conversion systems.