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Product Detailed Parameters
- Description：IGBT 400V 1W 8-SOIC
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 4V, 200A
- Power - Max：1 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：3.1µs/2µs
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package：8-SOP (5.5x6.0)
- Grade：-
- Qualification：-
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Overview
The GT10G131 is a silicon N-channel IGBT from Toshiba Semiconductor and Storage, utilizing a 5th generation trench gate structure. It features an enhancement-mode configuration with a built-in zener diode between the gate and emitter for protection. The device operates in a SOP-8 package with a collector-emitter voltage of 400 V and a maximum peak collector current of 200 A. It supports a minimum gate drive voltage of 4.0 V at 200 A, achieving a typical saturation voltage of 2.3 V. The component has a maximum junction temperature rating of 150 °C.
Feature Summary
- Fifth-generation trench gate structure for enhanced performance
- Built-in zener diode integrated between gate and emitter terminals
- Optimized for low-voltage gate drive operation at 4.0 V
Applications
- Strobe flash power supplies
- High-speed switching circuits requiring robust gate protection
Procurement Notes
Verify RoHS compatibility by checking the manufacturing week code marking on the component body; an underline indicates compliance. Confirm the specific ordering suffix matches the required environmental specifications. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing procurement plans to ensure long-term operational stability under intended load conditions.
Selection Notes
Select this component when designing circuits that require a 400 V blocking capability with high peak current handling up to 200 A. Ensure the gate driver can supply sufficient current to manage the input capacitance without exceeding the recommended dv/dt limits during turn-off. Verify that the thermal design accommodates the specified junction-to-ambient resistance values for the target pulse duration.
Part Context
This part belongs to Toshiba's lineup of discrete Insulated Gate Bipolar Transistors designed for general-purpose power switching. It represents the company's fifth-generation technology implementation, focusing on improved switching characteristics and simplified gate drive requirements compared to earlier generations.
Replacement Considerations
Direct substitutes must match the 400 V rating, 200 A peak current, and SOP-8 package. Verify that any alternative device maintains similar saturation voltage characteristics and includes equivalent gate-emitter protection mechanisms to ensure circuit compatibility.
