GT15J341,S4X

$2.49

Description：IGBT 600V 15A TO-220SIS
Series：-

SKU:d118141e6ce5 Category: Single IGBTs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 15A TO-220SIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：15 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 15A
Power - Max：30 W
Switching Energy：300µJ (on), 300µJ (off)
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：60ns/170ns
Test Condition：300V, 15A, 33Ohm, 15V
Reverse Recovery Time (trr)：80 ns
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220SIS
Grade：-
Qualification：-

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GT15J341,S4X

Overview

The GT15J341 is a silicon N-channel IGBT from Toshiba Semiconductor and Storage, utilizing sixth-generation technology. It features an integrated fast recovery diode (FRD) between the emitter and collector. The device operates with a collector-emitter voltage of 600 V and a continuous collector current of 15 A at 25°C. Typical saturation voltage is 1.5 V at 15 A. Switching characteristics include a turn-off time of 0.28 µs and reverse recovery time of 80 ns under standard test conditions. Thermal resistance from junction to case is 4.16 °C/W for the IGBT and 4.63 °C/W for the diode. It is housed in a TO-220SIS package.

Feature Summary

Sixth-generation silicon IGBT structure
Integrated fast recovery diode
Low saturation voltage design

Applications

Motor Drivers

Procurement Notes

Verify component authenticity by checking markings against official datasheet specifications. Confirm RoHS compatibility status directly with Toshiba sales representatives as indicated in documentation. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and handling precautions before integration into designs.

Selection Notes

Evaluate thermal management requirements based on junction-to-case thermal resistance values. Ensure gate drive voltages remain within the specified ±25 V limit. Consider short-circuit withstand capabilities when designing protection circuits. Verify operating temperature ranges align with application constraints.

Part Context

This discrete power semiconductor belongs to Toshiba's sixth-generation IGBT lineup. It is designed for high-efficiency switching applications requiring integrated freewheeling diodes. The TO-220SIS package facilitates mounting on heat sinks for effective thermal dissipation in industrial environments.