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Product Detailed Parameters
- Description：IGBT 600V 59A TO-3P
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tray
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：59 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：230 W
- Switching Energy：800µJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：80ns/280ns
- Test Condition：300V, 30A, 24Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P(N)
- Grade：-
- Qualification：-
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Overview
The GT30J341 is a silicon N-channel IGBT from Toshiba Semiconductor and Storage, designed for high-power switching and motor control applications. It features a TO-3P(N) package with an isolated collector connected to the heat sink. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 59 A at 25°C case temperature. It incorporates a built-in fast recovery diode (FRD). Key electrical parameters include a typical saturation voltage of 1.5 V at 30 A and a maximum junction temperature rating of 175°C.
Feature Summary
- Sixth generation technology architecture
- Low saturation voltage characteristics
- High junction temperature capability up to 175°C
- Integrated fast recovery diode between emitter and collector
Applications
- Motor drivers
Procurement Notes
Verify the specific ordering suffix 'Q' against official Toshiba documentation to confirm packaging or environmental compliance details. Confirm RoHS compatibility status directly with the manufacturer or authorized distributors, as indicated in the datasheet notes. Ensure the component matches the exact part number GT30J341,Q before integration into designs.
Selection Notes
Select this component for high-power motor drive circuits requiring robust thermal performance. Consider the 175°C maximum junction temperature for high-temperature environments. Evaluate the thermal resistance values for heatsink design. Verify that the 600V breakdown voltage and 59A current ratings suit the specific load requirements of the application.
Part Context
This discrete IGBT belongs to Toshiba's sixth-generation lineup of power switching devices. It is engineered for efficiency in industrial power conversion systems. The TO-3P(N) package facilitates effective heat dissipation through the isolated collector terminal, supporting reliable operation in demanding motor control scenarios.
Replacement Considerations
Consult Toshiba's official cross-reference guides for verified substitutes. Ensure any replacement maintains compatible voltage, current, and thermal specifications. Verify pinout and package dimensions match the existing PCB layout if substituting.
FAQ
What is the maximum junction temperature for the GT30J341?
The maximum junction temperature (Tj) is rated at 175°C.
Does the GT30J341 include an internal diode?
Yes, it includes a fast recovery diode (FRD) connected between the emitter and collector.
What is the typical saturation voltage at 30 A?
The typical collector-emitter saturation voltage (VCE(sat)) is 1.5 V when the collector current is 30 A.
