GT40RR21(STA1,E

$4.54

Description：IGBT 1200V 40A TO-3P
Series：-

SKU:3c029da042f6 Category: Single IGBTs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 40A TO-3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 40A
Power - Max：230 W
Switching Energy：-, 540µJ (off)
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：280V, 40A, 10Ohm, 20V
Reverse Recovery Time (trr)：600 ns
Operating Temperature：175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P(N)
Grade：-
Qualification：-

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GT40RR21(STA1,E

Overview

The GT40RR21(STA1,E is a silicon N-channel IGBT from Toshiba Semiconductor and Storage, belonging to the 6.5th generation RC-IGBT series. It features a monolithically integrated freewheeling diode (FWD) within the IGBT chip. The device supports high-speed switching with a typical fall time of 0.21 µs at IC = 40 A and a reverse recovery time of 0.60 µs for the FWD at IF = 15 A. Key electrical ratings include a collector-emitter voltage of 1350 V, a continuous collector current of 40 A, and a maximum power dissipation of 230 W. The saturation voltage is typically 2.05 V at IC = 40 A. It operates in a TO-3P(N) package with a junction temperature range up to 175 °C.

Feature Summary

Monolithic integration of a freewheeling diode within the IGBT chip structure.
High-speed switching capability optimized for resonant inverter applications.
Enhanced thermal performance supporting operation up to a maximum junction temperature of 175 °C.

Applications

Voltage-resonant inverter switching applications

Procurement Notes

Verify the specific ordering suffix STA1,E against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, and ensure the component matches the exact pinout and marking requirements for your design. Confirm that the intended application strictly adheres to the specified usage restrictions provided by the manufacturer.

Selection Notes

Select this component for designs requiring high-voltage handling up to 1350 V combined with fast switching speeds. Ensure the thermal management system can handle the 230 W power dissipation rating and maintain the junction temperature below 175 °C under all operating conditions. Verify gate drive requirements align with the specified voltage limits.

Part Context

This part belongs to Toshiba's discrete IGBT lineup utilizing 6.5th generation technology. It is designed specifically for voltage-resonant inverter circuits where low saturation voltage and fast switching are critical. The TO-3P(N) package provides robust mechanical mounting and thermal conductivity for industrial power electronics.

Replacement Considerations

Direct replacements must match the 1350 V rating, 40 A current capacity, and TO-3P(N) package. Verify switching times and saturation voltages closely to ensure circuit stability in resonant topologies.

FAQ

What is the typical turn-off switching loss (Eoff) for this device?

The typical turn-off switching loss is 0.28 mJ under resistive load conditions (VCC = 600 V, IC = 40 A) and 0.54 mJ under inductive load conditions (VCC = 280 V, IC = 40 A).