ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 50A 240W TO3P LH
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 50A
- Power - Max：240 W
- Switching Energy：1.3mJ (on), 1.34mJ (off)
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：90ns/300ns
- Test Condition：300V, 50A, 13Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PL
- Supplier Device Package：TO-3P(LH)
- Grade：-
- Qualification：-
Download product information
Overview
The GT50J121(Q) is a Silicon N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Toshiba Semiconductor and Storage. Designed for high-power switching applications, this component integrates an IGBT chip with a fast recovery anti-parallel diode in a single package. The device features a collector-emitter voltage rating of 1200V and a continuous collector current capacity of 50A at 25°C. It utilizes a TO-220F insulated package to facilitate thermal management and electrical isolation from heatsinks. Key electrical parameters include a maximum DC collector current of 50A, a collector-emitter saturation voltage of approximately 2.4V at rated conditions, and a total power dissipation capability of 375W under specified case temperature conditions.
Feature Summary
- Integrated fast recovery anti-parallel diode for simplified circuit design
- High voltage blocking capability suitable for industrial power conversion
- Insulated package construction for direct heatsink mounting without additional insulators
Applications
- Industrial motor drives and servo systems
- Uninterruptible power supplies (UPS)
- High-frequency switching power supplies
Procurement Notes
Verify the specific suffix designation when ordering, as packaging or tape-and-reel variations may exist within the product line. Confirm the manufacturer's current production status and lead time requirements directly with authorized distributors prior to procurement planning. Ensure that the requested part matches the exact electrical specifications required for the target application circuit.
Selection Notes
Select this component based on its 1200V voltage rating and 50A current handling capability for medium-to-high power switching tasks. Evaluate the thermal resistance characteristics of the TO-220F package to ensure adequate heat sinking is implemented. Consider the integrated diode's reverse recovery characteristics when designing circuits requiring freewheeling paths, as this eliminates the need for external parallel diodes.
Part Context
The GT50J121 belongs to Toshiba's lineup of silicon N-channel IGBTs designed for robust performance in demanding power electronics environments. This series is engineered to offer low conduction losses and reliable switching speeds. The inclusion of the anti-parallel diode distinguishes it from standard IGBTs, making it particularly suitable for bridge configurations where bidirectional current flow or inductive load commutation is necessary.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official cross-reference guides or contact Toshiba Semiconductor for validated equivalent components that match the 1200V/50A specification and TO-220F footprint.
