GT50JR21(STA1,E,S)

$5.56

Description：IGBT 600V 50A TO-3P
Series：-

SKU:011092ecfd90 Category: Single IGBTs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 50A TO-3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：100 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 50A
Power - Max：230 W
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P(N)
Grade：-
Qualification：-

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GT50JR21(STA1,E,S)

Overview

The GT50JR21(STA1,E,S) is a Silicon N-Channel IGBT from Toshiba Semiconductor and Storage, belonging to the 6.5th generation RC-IGBT series. It integrates a Freewheeling Diode monolithically within the IGBT chip. The device features a collector-emitter voltage of 600 V and a continuous collector current rating of 50 A at 25°C. It operates with a maximum junction temperature of 175°C and offers low saturation voltage characteristics. The component utilizes a TO-3P(N) package for through-hole mounting.

Feature Summary

RC-IGBT technology integrating a Freewheeling Diode monolithically in an IGBT chip
High-speed switching capability with optimized fall time and reverse recovery time
Low saturation voltage design for improved efficiency
Enhanced mode operation supporting high junction temperatures up to 175°C

Applications

Current-Resonant Inverter Switching Applications

Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives prior to procurement, as environmental compliance details are subject to specific product labeling. Ensure that handling procedures account for electrostatic discharge sensitivity during storage and assembly processes. Confirm that the intended application strictly adheres to the documented restrictions on unintended use and safety standards.

Selection Notes

Select this component specifically for current-resonant inverter switching applications where high-speed switching and low conduction losses are critical. Evaluate thermal management requirements carefully, considering the junction-to-case thermal resistance and power dissipation limits under varying load conditions. Ensure gate drive circuits support the specified voltage ranges to maintain optimal switching performance and reliability.

Part Context

This part belongs to Toshiba's discrete IGBT lineup, specifically the 6.5th generation RC-IGBT family. These devices are engineered to balance fast switching speeds with low saturation voltages, making them suitable for high-frequency power conversion topologies. The TO-3P(N) packaging provides robust mechanical stability and efficient heat dissipation capabilities for industrial power electronics.