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Product Detailed Parameters
- Description：IGBT 1000V 50A TO-3P
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tray
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 60A
- Power - Max：156 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：800 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P(N)
- Grade：-
- Qualification：-
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Overview
The GT50N322A is a Silicon N-Channel IGBT from Toshiba's fifth generation, designed for voltage resonance inverter switching applications. It features an integrated Fast Recovery Diode (FRD) between the emitter and collector. Key electrical parameters include a collector-emitter voltage of 1000 V, a DC collector current of 50 A, and a maximum power dissipation of 156 W at 25°C case temperature. The device exhibits a typical saturation voltage of 2.2 V at 60 A and a fall time of 0.10 μs. It operates within a junction temperature range up to 150°C and utilizes a TO-3P package.
Feature Summary
- Integrated FRD between emitter and collector
- High-speed switching capability
- Low saturation voltage design
Applications
- Voltage resonance inverter switching
- General electronics applications
- Industrial robotics
- Domestic appliances
Procurement Notes
Verify RoHS compatibility directly with the manufacturer or authorized distributor, as the datasheet specifies contacting sales representatives for product-specific details regarding restricted substances. Ensure the ordering suffix matches the required lead-free finish specifications. Confirm that the component meets all applicable safety standards for the intended general electronics application before finalizing procurement.
Selection Notes
Select this component for designs requiring high blocking voltage and fast switching speeds. Consider the thermal resistance of 0.8 °C/W when designing heat sinks. Verify that the gate drive circuit can handle the specified ±25 V limit. Evaluate the safe operating area curves to ensure reliable operation under pulsed load conditions and varying case temperatures.
Part Context
This part belongs to Toshiba's fifth-generation discrete IGBT lineup. It is engineered specifically for voltage resonance inverter applications, distinguishing it from standard hard-switching devices. The inclusion of an internal FRD simplifies circuit topology by eliminating the need for external anti-parallel diodes in certain configurations.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Cross-referencing requires matching the 1000 V rating, 50 A current capacity, TO-3P package, and specific switching characteristics like fall time and saturation voltage.
FAQ
What is the typical reverse recovery time of the integrated FRD?
The typical reverse recovery time (trr) is 0.8 μs when measured at a forward current of 15 A and a di/dt of -20 A/μs.
What is the maximum collector-emitter voltage rating?
The absolute maximum collector-emitter voltage (VCES) is rated at 1000 V.
How does the saturation voltage vary with temperature?
The collector-emitter saturation voltage increases as the case temperature rises, as shown in the VCE(sat) vs. Tc characteristic curve in the datasheet.
