GT650N15K

$0.25

Description：MOSFET N-CH 150V 20A TO-252
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR)

SKU:c0ba38656663 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

GT650N15K is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N-CH 150V 20A TO-252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GT650N15K

Description：MOSFET N-CH 150V 20A TO-252
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：65mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：68W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for GT650N15K

GT650N15K

Single FETs, MOSFETs Overview

The GT650N15K is an N-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device features a drain-source voltage of 150V, a continuous drain current of 20A at VGS=10V, and a maximum RDS(on) of 65mΩ under the same conditions. It is rated for a power dissipation of 68W and operates within a junction temperature range of -55°C to 175°C. The component is supplied in a TO-252 package.

Single FETs, MOSFETs Feature Summary

Advanced trench technology providing low gate charge and high performance
100% avalanche tested for enhanced reliability
RoHS compliant construction

Single FETs, MOSFETs Applications

Synchronous rectification in SMPS or LED drivers
Uninterruptible Power Supplies (UPS)
Motor control systems
Battery Management Systems (BMS)
High frequency circuits

Single FETs, MOSFETs Procurement Notes

Verify that the specific order matches the GT650N15K part number exactly. Confirm the package type is TO-252 and the marking reads GT650N15. Ensure compliance with RoHS standards if required by your application specifications. Check datasheet thermal resistance values for proper heat sinking requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a 150V N-channel MOSFET with 20A continuous current capability is needed. Consider its 65mΩ maximum on-resistance for efficiency calculations. Verify that the TO-252 package fits your PCB layout constraints. Ensure the operating environment stays within the specified -55°C to 175°C junction temperature range.

Single FETs, MOSFETs Part Context

This part belongs to Goford Semiconductor's lineup of N-Channel Enhancement Mode Power MOSFETs. These devices are designed for general-purpose switching applications requiring robust performance. The GT650N15K specifically targets medium-power applications where low conduction losses and fast switching speeds are beneficial.