GT6K2P10KH

$0.59

Description：MOSFET P-CH 100V 4.3A TO-252
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f922329a6fee Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

GT6K2P10KH is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET P-CH 100V 4.3A TO-252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GT6K2P10KH

Description：MOSFET P-CH 100V 4.3A TO-252
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：670mOhm @ 1A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：247 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for GT6K2P10KH

GT6K2P10KH

Single FETs, MOSFETs Overview

The GT6K2P10KH is a P-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of -100 V, a continuous drain current of -4.3 A at VGS = -10V, and an on-resistance of less than 670 mΩ under the same conditions. It is housed in a TO-252 package with a maximum power dissipation of 25 W and operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for optimized on-resistance and switching performance
100% avalanche tested for enhanced reliability
RoHS compliant construction

Single FETs, MOSFETs Applications

Power switch circuits
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and packaging quantity against official distributor catalogs before procurement. Confirm that the TO-252 package dimensions align with the target PCB footprint. Ensure compliance with RoHS standards if required by the end application. Cross-reference the manufacturer part number GT6K2P10KH with authorized supply channels to guarantee component authenticity.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a P-channel MOSFET with a -100 V rating and moderate current handling capabilities. Consider the thermal resistance values when designing heat dissipation solutions. Evaluate the gate charge specifications against the driving circuit requirements to ensure efficient switching speeds. Verify that the operating temperature range meets the environmental constraints of the intended deployment.

Single FETs, MOSFETs Part Context

This component belongs to the family of P-Channel Enhancement Mode Power MOSFETs produced by Goford Semiconductor. These devices are designed using trench technology to provide improved electrical characteristics compared to standard planar structures. The TO-252 package provides a balance between power handling capacity and surface-mount convenience for various electronic assemblies.