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The GTRA184602FC-V1-R2 is a GaN-on-SiC HEMT amplifier designed for cellular power applications. It operates in the 1805–1880 MHz frequency band with a 48V drain voltage. The device delivers 480W of output power at P3dB compression point. It utilizes a D-mode configuration and features a Reel package format. The component is classified as a GaN FET within the wireless and RF integrated circuits subcategory, manufactured by MACOM Technology Solutions.
Verify the specific suffix V1-R2 against the manufacturer's current datasheet to confirm pinout and tape-and-reel specifications. Ensure compatibility with existing thermal management designs due to high power dissipation. Confirm RoHS compliance status and ECCN classification for export requirements before finalizing procurement orders.
Select this component for applications requiring high linearity and efficiency in the 1800 MHz band. Consider the 48V operating voltage when designing bias networks. Evaluate thermal resistance requirements given the 480W output capability. Compare against alternative GaN HEMTs if different frequency coverage or packaging constraints exist.
This part belongs to MACOM's family of GaN-on-SiC HEMT devices. It complements other models like the GTRB184402FC-V1-R2 within the same product line. These components are engineered for demanding RF environments where traditional silicon technologies may not suffice for power density requirements.
Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM directly for qualified alternatives or cross-reference options.