GTRA214602FC-V1-R0

Overview

The GTRA214602FC-V1-R0 is a GaN-on-SiC HEMT RF power amplifier manufactured by MACOM Technology Solutions. It operates within the frequency range of 2140-2200 MHz and delivers an output power of 480W at a drain voltage of 48V. The device utilizes Gallium Nitride on Silicon Carbide technology to achieve high efficiency and power density in wireless infrastructure applications.

Feature Summary

• Utilizes GaN-on-SiC HEMT technology for enhanced thermal performance and power density
• Designed for high-efficiency linear amplification in demanding RF environments
• Engineered for robust operation in base station transmitter modules

Applications

• Base station power amplifiers
• Wireless communication infrastructure
• Broadband RF transmission systems

Procurement Notes

Verify current availability directly with MACOM or authorized distributors, as this component may be subject to factory special order status. Confirm specific ordering suffixes and packaging requirements, such as reel quantities, against the latest official datasheet to ensure compatibility with manufacturing processes.

Selection Notes

Select this component for applications requiring high linearity and power output in the 2.1 GHz band. Ensure the design supports the required 48V bias and adequate thermal management for GaN devices. Verify that the system architecture aligns with the specific gain and efficiency characteristics documented in the official technical specifications.

Part Context

This part belongs to MACOM's portfolio of GaN-on-SiC HEMT transistors designed for cellular base stations. It complements other models in the series offering different frequency bands and power levels, providing designers with scalable solutions for modern wireless network deployments requiring high spectral efficiency.

Replacement Considerations

Consult official MACOM documentation for verified cross-reference parts. Substitutes must match the frequency range, power output, and package dimensions. Do not assume interchangeability with similar GaN devices from other manufacturers without rigorous electrical and mechanical validation.