GTRA263902FC-V2-R2

Overview

The GTRA263902FC-V2-R2 is a thermally-enhanced high-power RF GaN-on-SiC HEMT manufactured by Wolfspeed. It operates within the 2495 MHz to 2690 MHz frequency range and delivers a saturated output power of 370 W at P3dB under typical pulsed CW conditions at 2690 MHz and 48 V. The device features an input-matched design, achieving approximately 70% efficiency and 15 dB gain in combined output configurations. It utilizes the H-37248C-4 earless flange package with a thermal resistance of 1.8 °C/W.

Feature Summary

• GaN-on-SiC HEMT technology providing high power density and low thermal resistance
• Integrated input matching network for simplified circuit integration
• Robust load-pull performance capable of handling 10:1 VSWR at 56 W CW output
• ESD protection compliant with Human Body Model class 1A standards

Applications

• Multi-standard cellular base station power amplifiers
• Broadband RF power generation systems
• Military communication transmitter modules

Procurement Notes

Verify the specific ordering suffix (e.g., -R0 or -R2) against the required shipping quantity, as the datasheet specifies tape and reel packaging options of 50 or 250 pieces. Confirm that the component source aligns with the manufacturer's authorized distribution channels to ensure authenticity and traceability of the Wolfspeed-manufactured device.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the L-band spectrum. The integrated input match reduces external component count. Ensure the thermal management system can maintain the case temperature near 70°C to support the specified DC dissipation and junction temperature limits during continuous operation.

Part Context

This part belongs to the GTRA series of high-power RF transistors designed for demanding wireless infrastructure environments. It represents a transition from traditional silicon-based technologies to wide-bandgap semiconductors, offering superior breakdown voltage and electron mobility characteristics essential for modern cellular network deployments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDSS) rating is 125 V.

How does the device handle mismatched loads?

The transistor is capable of handling a 10:1 Voltage Standing Wave Ratio (VSWR) while delivering 56 W of continuous wave output power at 48 V.

What is the recommended gate quiescent voltage?

For reliable operation at a drain voltage of 48 V, the recommended gate quiescent voltage (VGS(Q)) is -3 V, corresponding to a drain current of 200 mA.