GTRA362002FC-V1-R2

GTRA362002FC-V1-R2

$127.08
  • Description:RF MOSFET HEMT 48V H-37248C-4
  • Series:GaN

SKU:dc5f0352c25c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 48V H-37248C-4
  • Series:GaN
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR)
  • Technology:HEMT
  • Frequency:3.4GHz ~ 3.6GHz
  • Gain:13.5dB
  • Voltage - Test:48 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:140 mA
  • Power - Output:200W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-37248C-4
  • Supplier Device Package:H-37248C-4
  • Configuration:-

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GTRA362002FC-V1-R2

Overview

The GTRA362002FC-V1-R2 is a GaN-on-SiC high electron mobility transistor (HEMT) manufactured by MACOM Technology Solutions. It operates within the frequency range of 3.4GHz to 3.6GHz and provides a gain of 13.5dB. The device is designed as a depletion-mode amplifier with a power output of 200 watts at P3dB compression point. It requires a test voltage of 48V for operation. The component is housed in an H-37248C-4 package and is currently in active production status.

Feature Summary

  • Utilizes GaN-on-SiC technology for high-power RF applications
  • Designed as a depletion-mode amplifier for cellular signals
  • Capable of delivering 200-watt output power

Applications

  • Multi-standard cellular power amplifier modules
  • Base station transmitter systems
  • Broadband RF power amplification

Procurement Notes

Verify that the specific suffix -R2 matches the required reel packaging configuration against the official datasheet specifications. Confirm the active status directly with the manufacturer or authorized distributors to ensure supply chain availability. Ensure compatibility with the specified 48V bias requirements and thermal management solutions suitable for 200W output devices before finalizing procurement orders.

Selection Notes

Select this component when designing systems requiring high linearity and efficiency in the 3.4GHz to 3.6GHz band. The GaN-on-SiC construction offers superior thermal conductivity compared to traditional silicon-based alternatives. Engineers must account for the depletion-mode nature of the device, which impacts biasing circuit design. The 48V operating voltage dictates the power supply architecture and isolation requirements within the amplifier module.

Part Context

This part belongs to MACOM's GTRA series of GaN-on-SiC HEMTs, which are engineered for demanding wireless infrastructure applications. The series is characterized by high power density and robust performance in multi-carrier environments. The GTRA362002FC variant specifically targets wideband cellular standards, providing a balance of gain and output power necessary for modern base station architectures.

Replacement Considerations

The GTRA364002FC-V1-R2 is a documented substitute part number from the same manufacturer family.

GTRA362002FC-V1-R2GTRA362002FC-V1-R2
$127.08
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