SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The GTRA362802FC is a thermally-enhanced high-power RF GaN on SiC HEMT designed for multi-standard cellular power amplifier applications. It features an asymmetrical Doherty architecture with input matching and an earless flange package (H-37248C-4). The device operates at 48 V in the 3400–3600 MHz range, delivering a combined typical P3dB output power of 280 W with 60% drain efficiency under pulsed CW conditions. Main and peak transistor sections provide 120 W and 180 W typical P3dB respectively.
Verify the specific ordering suffix to confirm packaging quantity and reel specifications. Confirm compliance with RoHS standards and Pb-free requirements prior to procurement. Ensure thermal management solutions align with the specified junction temperature limits and thermal resistance values provided in the datasheet.
Select this component for designs requiring high linearity and efficiency in the 3.4 to 3.6 GHz band. The integrated input match reduces external component count. Evaluate thermal performance against the maximum operating voltage and current ratings to ensure reliability within the recommended operating conditions.
Manufactured by Wolfspeed using GaN-on-SiC technology, this part belongs to a family of high-power RF transistors optimized for demanding wireless infrastructure. The H-37248C-4 package provides robust mechanical mounting and thermal conductivity essential for high-power density applications.
No public confirmed substitute part numbers are available in the documentation.
The typical combined P3dB output power is 280 W under pulsed CW conditions at 48 V.
Yes, the GTRA362802FC features built-in input matching to simplify amplifier design.
The absolute maximum junction temperature rating is 225 °C.