GTRA364002FC-V1-R0

Overview

The GTRA364002FC-V1-R0 is a thermally-enhanced high power RF GaN on SiC D-mode amplifier designed for multi-standard cellular power amplifier applications. It features an asymmetrical Doherty design with input matching and operates in the 3400 to 3600 MHz frequency range at 48 V. The device delivers 400 W output power with 60% efficiency and 14 dB gain under typical pulsed CW conditions (10 µs, 10% duty cycle). It utilizes H-37248C-4 package technology.

Feature Summary

• Asymmetrical Doherty architecture combining main and peak devices
• Input matched configuration simplifying circuit integration
• Thermally enhanced earless flange package design
• Robust capability to handle 10:1 VSWR at rated output power

Applications

• Multi-standard cellular base station power amplification
• WCDMA signal processing and transmission
• High power RF linear amplification systems

Procurement Notes

Verify the specific ordering suffix matches the required shipping format. The V1-R0 variant is supplied in tape and reel packaging containing fifty pieces per unit. Confirm that the component version aligns with the intended production requirements before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the 3400 to 3600 MHz band. Ensure the bias sequencing strictly follows the recommended procedure to prevent gate damage. Verify thermal management capabilities match the specified junction temperature limits during continuous operation.

Part Context

This model belongs to MACOM's portfolio of thermally enhanced high power RF GaN on SiC amplifiers. It is engineered specifically for demanding cellular infrastructure environments where high output power and reliability are critical. The device integrates both main and peak stages into a single monolithic structure.

Replacement Considerations

No public confirmed substitute part numbers are documented in the official datasheet.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage rating is 125 V.

How should the bias be sequenced during turn-on?

Apply pinch-off voltage to the gate first, then apply nominal drain voltage, followed by adjusting the gate to the desired quiescent current, and finally applying the RF signal.

What is the ESD sensitivity classification?

The device is classified as Human Body Model Class 1A according to ANSI/ESDA/JEDEC JS-001 standards.