GTRA364002FC-V1-R2

GTRA364002FC-V1-R2

$171.06
  • Description:RF MOSFET HEMT 48V H-37248C-4
  • Series:GaN

SKU:3a9c04e9d079 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 48V H-37248C-4
  • Series:GaN
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR)
  • Technology:HEMT
  • Frequency:3.4GHz ~ 3.6GHz
  • Gain:13dB
  • Voltage - Test:48 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:220 mA
  • Power - Output:400W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-37248C-4
  • Supplier Device Package:H-37248C-4
  • Configuration:-

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GTRA364002FC-V1-R2

Overview

The GTRA364002FC-V1-R2 is a Gallium Nitride on Silicon Carbide (GaN-on-SiC) High Electron Mobility Transistor (HEMT) manufactured by MACOM Technology Solutions. This device is designed for high-frequency radio frequency power amplification applications, specifically operating within the 3.4 GHz to 3.6 GHz frequency range. It delivers a typical saturated output power of 400 watts and provides a gain of approximately 13 dB. The component requires a drain voltage of 48 volts for operation. It is housed in an H-37248C-4 surface mount package, which is compliant with RoHS standards. The transistor is engineered to support multi-standard cellular infrastructure requirements.

Feature Summary

  • Utilizes GaN-on-SiC technology for enhanced thermal performance and high power density
  • Designed for robust operation in demanding RF power amplification environments
  • Optimized for linear and saturated modes in cellular base station applications

Applications

  • Multi-standard cellular base station power amplifiers
  • Broadband RF power amplification systems
  • Military and aerospace communication equipment
  • Point-to-point microwave links

Procurement Notes

Verify the specific suffix V1-R2 against the manufacturer's latest datasheet to confirm pinout compatibility and electrical characteristics. Ensure that the ordering information matches the exact part number required for your design, as variations may exist between different production revisions or packaging options provided by authorized distributors.

Selection Notes

Select this component when designing systems requiring high output power in the 3.4–3.6 GHz band. Consider the 48V bias requirement and the need for appropriate thermal management solutions due to the high power dissipation. Evaluate the H-37248C-4 package dimensions for PCB layout constraints and ensure the driving circuitry can support the necessary input impedance matching for optimal gain and efficiency.

Part Context

This model belongs to the GTRA series of GaN HEMTs from MACOM, which are widely used in modern wireless infrastructure. The GTRA364002FC variant specifically targets the C-band spectrum, offering a balance of high power and linearity. It represents a mature solution for upgrading existing cellular networks to support higher data throughput and multiple communication standards simultaneously.

Replacement Considerations

Direct substitutes include the GTRA364002FC-V1-R0, which shares identical electrical specifications but may differ in reel packaging configuration. Designers should verify mechanical footprint compatibility and reflow soldering profiles when transitioning between these variants.

GTRA364002FC-V1-R2GTRA364002FC-V1-R2
$171.06
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