GTRA412852FC-V1-R0

Overview

The GTRA412852FC-V1-R0 is a GaN HEMT RF power amplifier module manufactured by MACOM Technology Solutions. Designed for high-performance wireless infrastructure, this component operates within the 2.7 to 3.1 GHz frequency range. It delivers an output power of 180W and utilizes a 50V supply voltage. The device features a pill package configuration suitable for surface mount applications. Key electrical characteristics include a gain of 15 dB and a maximum operating temperature of +225°C. This amplifier is engineered for robust performance in demanding radio frequency environments.

Feature Summary

• Utilizes Gallium Nitride on Silicon Carbide (GaN on SiC) technology for enhanced power density and thermal stability.
• Engineered with a pill package design optimized for high-power surface mount assembly.
• Capable of sustaining extreme junction temperatures up to +225°C for reliable operation.

Applications

• Base station power amplification
• Point-to-point microwave links
• Military radar systems

Procurement Notes

Verify current availability status directly with authorized distributors or the manufacturer, as lead times may vary significantly due to production constraints. Confirm that the specific revision suffix matches the required design-in specifications. Ensure compliance with relevant export control classifications and environmental standards before finalizing procurement orders.

Selection Notes

Select this component when high linear output power and wide bandwidth are critical requirements for the application. Evaluate thermal management solutions carefully, given the high power dissipation and elevated maximum operating temperature capabilities. Compare against alternative packages if board space constraints differ from the standard pill footprint requirements.

Part Context

This part belongs to MACOM's portfolio of GaN HEMT power amplifiers designed for cellular infrastructure. It represents a solution for upgrading existing base station architectures to support higher data throughput. The device integrates advanced semiconductor materials to achieve superior efficiency compared to traditional LDMOS technologies in similar frequency bands.

Replacement Considerations

Public confirmed substitute part numbers are not available in verified documentation. Consult MACOM technical support for potential cross-reference options or updated revisions. Verify pinout compatibility and thermal interface requirements before considering any alternative components.