GTRB097152FC-V1-R2

Overview

The GTRB097152FC-V1-R2 is a GaN-on-SiC High-Electron-Mobility Transistor (HEMT) designed for multi-standard cellular power amplifier applications. It operates as a depletion-mode device within the 758 to 960 MHz frequency range. The component delivers an output power of 900 watts at P4dB compression and 450 watts at P3dB compression when supplied with 48 volts. This architecture supports high-efficiency amplification required for modern wireless infrastructure.

Feature Summary

• Utilizes Gallium Nitride on Silicon Carbide technology for robust thermal and electrical performance
• Engineered specifically for multi-standard cellular base station power amplifier modules
• Features depletion-mode operation suitable for direct RF drive applications

Applications

• Multi-standard cellular base station power amplifiers
• Broadband RF power amplification in wireless infrastructure
• High-power linear amplification systems operating in sub-1 GHz bands

Procurement Notes

Verify the specific suffix R2 against the manufacturer's current datasheet to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the ordering part number matches the exact voltage and power rating requirements for your design. Cross-reference the revision level to guarantee compatibility with existing thermal management solutions and PCB footprints defined in the official MACOM documentation.

Selection Notes

Select this component for designs requiring high linearity and efficiency in cellular infrastructure. The 48V supply requirement dictates power bus design considerations. Evaluate thermal resistance characteristics to ensure adequate heat sinking for continuous 900W operation. Confirm that the 758-960MHz bandwidth aligns with target regulatory frequency allocations for the intended deployment region.

Part Context

This device belongs to MACOM's GTRB series of thermally enhanced GaN HEMTs. The series targets high-power density applications in telecommunications. The V1 designation indicates a specific product iteration with optimized characteristics for cellular PA modules. The FC package type suggests a specific leadless surface-mount configuration designed for efficient thermal dissipation through the substrate.

Replacement Considerations

Direct substitutes include the GTRB097152NC for 820W variants or the GTRB184402FC for higher frequency ranges. Verify pinout compatibility and thermal pad dimensions before substitution. Review updated datasheets for any changes in absolute maximum ratings or test conditions between revisions.