GTRB204402FC/1-V1-R2

GTRB204402FC/1-V1-R2

$95.63
  • Description:RF MOSFET HEMT H-37248C-4
  • Series:-

SKU:5f7ab108ca53 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET HEMT H-37248C-4
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR)
  • Technology:HEMT
  • Frequency:1.93GHz ~ 2.02GHz
  • Gain:16.3dB
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:350W
  • Voltage - Rated:48 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-37248C-4
  • Supplier Device Package:H-37248C-4
  • Configuration:-

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GTRB204402FC/1-V1-R2

Overview

The GTRB204402FC/1-V1-R2 is a Gallium Nitride on Silicon Carbide (GaN-on-SiC) High Electron Mobility Transistor (HEMT) manufactured by MACOM Technology Solutions. It operates within the 1930 MHz to 2020 MHz frequency band and delivers 400 Watts of output power at 48 Volts. The device utilizes a high-performance 0.15-micron GaN production process, designed for robust RF applications requiring significant power handling capabilities in this specific UHF/VHF range.

Feature Summary

  • Utilizes advanced 0.15-micron GaN-on-SiC HEMT technology for superior performance
  • Delivers high-power output capability suitable for demanding RF environments
  • Engineered for operation within the 1.93 GHz to 2.02 GHz frequency spectrum

Applications

  • High-power RF amplifier stages
  • Military communication systems
  • Electronic warfare equipment
  • Test and measurement instrumentation

Procurement Notes

Verify the complete part number including the -R2 suffix to ensure correct reel packaging configuration. Confirm that the 48V supply requirements align with your system design. Ensure compatibility with the specified 1930-2020 MHz operational bandwidth before integration into final assemblies.

Selection Notes

Select this component when high linearity and efficiency are required in the 2 GHz range. The GaN-on-SiC substrate provides thermal stability advantages over traditional silicon devices. Consider the 400W power rating against your thermal management infrastructure to ensure reliable long-term operation under continuous load conditions.

Part Context

This device belongs to MACOM's portfolio of high-performance analog components. It represents the company's focus on wide-bandgap semiconductor technologies. The product supports modern communication networks requiring high density and signal integrity. It complements other RF solutions in their ecosystem.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM directly for cross-reference information or updated component availability status.

GTRB204402FC/1-V1-R2GTRB204402FC/1-V1-R2
$95.63
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