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The GTRB204402FC/1-V1-R2 is a Gallium Nitride on Silicon Carbide (GaN-on-SiC) High Electron Mobility Transistor (HEMT) manufactured by MACOM Technology Solutions. It operates within the 1930 MHz to 2020 MHz frequency band and delivers 400 Watts of output power at 48 Volts. The device utilizes a high-performance 0.15-micron GaN production process, designed for robust RF applications requiring significant power handling capabilities in this specific UHF/VHF range.
Verify the complete part number including the -R2 suffix to ensure correct reel packaging configuration. Confirm that the 48V supply requirements align with your system design. Ensure compatibility with the specified 1930-2020 MHz operational bandwidth before integration into final assemblies.
Select this component when high linearity and efficiency are required in the 2 GHz range. The GaN-on-SiC substrate provides thermal stability advantages over traditional silicon devices. Consider the 400W power rating against your thermal management infrastructure to ensure reliable long-term operation under continuous load conditions.
This device belongs to MACOM's portfolio of high-performance analog components. It represents the company's focus on wide-bandgap semiconductor technologies. The product supports modern communication networks requiring high density and signal integrity. It complements other RF solutions in their ecosystem.
Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM directly for cross-reference information or updated component availability status.