GTRB206002FC/1-V1-R0

Overview

The GTRB206002FC/1-V1-R0 is a GaN-on-SiC HEMT D-mode amplifier from MACOM Technology Solutions. It operates in the 1.93 GHz to 2.69 GHz frequency range with a typical power output of 500 watts at P3dB compression. The device features a drain-source breakdown voltage (V(BR)DSS) of -8 V under specified conditions. Packaged for surface mount applications, it supports multi-standard cellular power amplifier designs.

Feature Summary

• Utilizes Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology for high power density
• Designed as a depletion-mode (D-mode) High Electron Mobility Transistor (HEMT)
• Engineered specifically for multi-standard cellular base station power amplifier applications

Applications

• Multi-standard cellular base station power amplification
• Broadband RF power amplification in the 1.93-2.69 GHz range
• High-power wireless communication infrastructure

Procurement Notes

Verify the specific suffix 'R0' against the manufacturer's current datasheet to confirm reel packaging and tape-and-reel specifications. Ensure compatibility with existing thermal management solutions, as this component requires appropriate heat sinking for 500W operation. Confirm RoHS compliance status and ECCN classification for export control purposes before finalizing procurement orders.

Selection Notes

Select this component when designing for high-efficiency, high-power density requirements in cellular infrastructure. The GaN-on-SiC material system offers superior thermal conductivity compared to traditional silicon devices. Consider the D-mode characteristic for biasing circuit design. Evaluate the 500W P3dB output against system linearity and efficiency targets within the 1.93-2.69 GHz operational band.

Part Context

This part belongs to MACOM's GTRB series of GaN HEMT amplifiers. These components are engineered for demanding RF power applications where size, weight, and power efficiency are critical. The series typically integrates robust protection features and consistent performance across wide temperature ranges, supporting modern telecommunications standards.

Replacement Considerations

Consult MACOM official documentation for direct pin-compatible or functionally equivalent replacements. Verify that any substitute maintains the 500W P3dB output capability and 1.93-2.69 GHz frequency coverage. Ensure thermal interface characteristics and package dimensions match the existing PCB layout and heatsink design.