GTRB226002FC-V1-R0

Overview

The GTRB226002FC-V1-R0 is a high-power RF GaN-on-SiC HEMT from MACOM Technology Solutions. It operates within the frequency range of 2110 MHz to 2200 MHz. The device provides a gain of 15 dB and delivers an output power of 450 W at a drain voltage of 48 V. It utilizes an H-37248C-4 earless flange package for thermal management.

Feature Summary

• Utilizes GaN-on-SiC HEMT technology for high power density
• Designed for high efficiency in RF power amplification
• Features robust thermal performance via specialized packaging

Applications

• Base station power amplification
• Military radar systems
• Electronic warfare applications

Procurement Notes

Verify the complete part number including suffixes such as R0 or R2, as these indicate specific reel configurations or tape-and-reel variations. Confirm that the H-37248C-4 earless flange package matches your mechanical design requirements. Ensure compatibility with the specified 48 V operating voltage and thermal interface materials before procurement.

Selection Notes

Select this component when high output power and wide bandwidth are required in the L-band spectrum. The GaN-on-SiC construction offers superior thermal conductivity compared to traditional silicon devices. Consider the earless flange package for direct mounting to cold plates or heatsinks without additional hardware constraints.

Part Context

This device belongs to MACOM's portfolio of high-performance RF power transistors. It is engineered for demanding wireless infrastructure and defense applications where reliability and linearity are critical. The product line supports scalable solutions for modern communication networks requiring high spectral efficiency.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout and thermal pad dimensions against potential alternatives to ensure mechanical and electrical compatibility.