GTRB226002FC-V1-R2

Overview

The GTRB226002FC-V1-R2 is a high-power RF GaN-on-SiC HEMT transistor manufactured by MACOM Technology Solutions. It operates within the 2.11 GHz to 2.20 GHz frequency range, delivering a power output of 450 W at a drain voltage of 48 V. The device provides a gain of 20 dB and features an SMD/SMT installation style in an H-37248-4 package. Designed for robust performance, it supports a maximum operating temperature of +225°C and utilizes Silicon Carbide substrate technology for enhanced thermal management and efficiency in demanding RF applications.

Feature Summary

• High Power Output: Delivers 450 W of RF power for high-efficiency amplification.
• GaN-on-SiC Technology: Utilizes Gallium Nitride on Silicon Carbide for superior thermal conductivity and breakdown voltage.
• S-Band Operation: Optimized for operation in the 2.11 GHz to 2.20 MHz frequency band.
• High Thermal Stability: Supports maximum junction temperatures up to +225°C.

Applications

• S-Band Radar Systems
• Military Communications
• Electronic Warfare Applications
• Base Station Amplifiers

Procurement Notes

Verify current availability and lead times directly with authorized distributors or the manufacturer, as this component may be subject to factory special order status. Confirm that the specific suffix -R2 matches the required reel packaging quantity and tape specifications for your assembly line. Ensure compliance with RoHS directives and check for any recent Product Change Notifications (PCNs) regarding material or process updates before finalizing procurement orders.

Selection Notes

Select this component when designing systems requiring high power density in the S-band frequency range. The GaN-on-SiC technology offers advantages over traditional silicon devices regarding thermal handling and efficiency. Ensure the design accommodates the 48 V drain voltage requirement and implements adequate heat sinking solutions to manage the high power dissipation. Verify that the H-37248-4 package footprint aligns with the PCB layout constraints and thermal vias requirements.

Part Context

This part belongs to MACOM's portfolio of high-performance RF transistors designed for defense and aerospace markets. It complements other GaN-based solutions like the GTRB184402FC series, offering higher power output in a similar form factor. The device represents the company's focus on advancing solid-state power amplifier technologies for next-generation communication and radar systems.

Replacement Considerations

The GTRB226002FC-V1 is the base model without the reel suffix. Direct substitutes are not explicitly listed in public documentation; however, designers should evaluate other MACOM S-band GaN HEMTs such as the CGHV series for potential pin-compatible or functional alternatives if supply chain constraints exist.