GTRB424908FC/1-V1-R0

GTRB424908FC/1-V1-R0

$166.18
  • Description:RF MOSFET HEMT H-37248KC-6
  • Series:-

SKU:97fa56b5b3b5 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HEMT H-37248KC-6
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR)
  • Technology:HEMT
  • Frequency:3.7GHz ~ 4GHz
  • Gain:12dB
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:450W
  • Voltage - Rated:48 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-37248KC-6/2
  • Supplier Device Package:H-37248KC-6/2
  • Configuration:-

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GTRB424908FC/1-V1-R0

Overview

The GTRB424908FC/1-V1-R0 is a GaN-on-SiC HEMT RF power amplifier from MACOM Technology Solutions. It operates within the 3700 MHz to 3980 MHz frequency range, delivering 450 watts of output power at a 48-volt supply. The device utilizes a high-performance 0.15-micron GaN process on silicon carbide substrates. Packaged in a reel format, it is designed for high-efficiency linear amplification applications requiring robust thermal management and wide bandwidth capabilities.

Feature Summary

  • Utilizes advanced 0.15-micron GaN-on-SiC production process technology
  • Provides high-power linear amplification with wide operational bandwidth
  • Engineered for superior thermal performance and reliability

Applications

  • Base station transmitter modules
  • Electronic warfare systems
  • Military radar transmitters

Procurement Notes

Verify current availability status directly with authorized distributors or the manufacturer, as supply constraints may apply. Confirm that the specific suffix matches the required voltage and frequency specifications for your design. Ensure proper handling procedures are followed due to moisture sensitivity classification. Cross-reference the datasheet revision date to confirm technical parameters align with your system requirements before finalizing procurement orders.

Selection Notes

Select this component when designing systems requiring high output power in the C-band spectrum. Evaluate thermal dissipation needs carefully given the 450-watt output capability. Ensure biasing circuits support the 48-volt requirement. Consider the package type for PCB layout and heat sinking integration. Verify impedance matching networks are optimized for the specified 3700-3980 MHz range to maximize efficiency and linearity.

Part Context

This part belongs to MACOM's portfolio of GaN-based radio frequency power amplifiers. These devices leverage silicon carbide substrates for enhanced thermal conductivity and breakdown voltage compared to traditional silicon technologies. The series targets demanding communication and defense applications where size, weight, and power efficiency are critical design constraints.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult MACOM engineering support for qualified alternatives if this specific model is discontinued or unavailable. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics.

GTRB424908FC/1-V1-R0GTRB424908FC/1-V1-R0
$166.18
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