GTRB424908FC/1-V1-R2

Overview

The GTRB424908FC/1-V1-R2 is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) manufactured by MACOM Technology Solutions. It is designed for high-power radio frequency applications, specifically operating within the 3700 MHz to 3980 MHz frequency range. The device supports a drain voltage of 48V and delivers an output power of 450W. This component utilizes advanced GaN-on-SiC technology to achieve high efficiency and power density in demanding RF environments.

Feature Summary

• Utilizes robust GaN-on-SiC HEMT technology for superior thermal and electrical performance
• Engineered for high-power amplification in the C-band spectrum
• Designed for integration into high-efficiency RF power amplifier modules

Applications

• Base station power amplifiers
• Military radar systems
• Electronic warfare equipment

Procurement Notes

Verify the specific suffix revision against official MACOM documentation, as the provided model includes a V1-R2 designation which may differ from standard public datasheets referencing V1-R0. Confirm availability through authorized distributors, as supply status can vary. Ensure all technical specifications align with the latest manufacturer release notes before finalizing procurement orders.

Selection Notes

Select this component when designing systems requiring high linearity and efficiency in the 3.7-3.98 GHz band. Consider the 48V bias requirement and 450W power handling capabilities during circuit design. Evaluate thermal management solutions suitable for high-power GaN devices to ensure reliable operation under continuous wave conditions.

Part Context

This part belongs to MACOM's portfolio of high-performance GaN HEMTs intended for infrastructure and defense applications. These components are characterized by their ability to operate at high frequencies with significant power output, supporting the growing demand for robust RF front-end solutions in modern communication and sensing systems.