GTVA101K42EV-V1-R0

Overview

The GTVA101K42EV is a thermally-enhanced high power RF GaN on SiC HEMT designed for the DC to 1400 MHz frequency band. It features an input matched architecture and a bolt-down flange package (H-36275-4). Typical pulsed CW performance at 960–1400 MHz, 50 V, 128 μs pulse width, and 10% duty cycle yields 1400 W output power at P3dB, 68% efficiency, and 17 dB gain. The device operates with a drain-source breakdown voltage of 125 V and supports a maximum junction temperature of 225 °C.

Feature Summary

• GaN on SiC HEMT technology
• Input matched design
• Thermally-enhanced package with bolt-down flange

Applications

• L-Band Radar systems
• Test fixtures for pulsed CW characterization
• High power RF amplification in the DC to 1400 MHz band

Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix -V1-R0 indicates tape and reel packaging containing 50 pieces per unit. Confirm that the required quantity matches the available reel sizes, such as the 250-piece option (-R2), to ensure proper handling and integration into manufacturing workflows.

Selection Notes

Select this component for applications requiring high output power density in the L-band spectrum. Ensure the thermal management solution can maintain the case temperature within specified limits given the low thermal resistance values. Verify that the drive circuitry can support the required gate biasing and input matching network for optimal efficiency and linearity.

Part Context

This part belongs to MACOM's portfolio of high electron mobility transistors utilizing Gallium Nitride on Silicon Carbide substrates. These devices are engineered for robustness and high power handling capabilities in demanding radio frequency environments, distinguishing them from lower-power silicon-based alternatives.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the datasheet.

FAQ

What is the typical drain efficiency at P3dB?

The typical drain efficiency is 68% under standard pulsed CW test conditions.

Does the device require external input matching?

No, the GTVA101K42EV is an input matched device.

What is the maximum junction temperature rating?

The absolute maximum junction temperature is 225 °C.