GTVA101K42EV-V1-R250

Overview

The GTVA101K42EV-V1-R250 is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) manufactured by MACOM Technology Solutions. It is designed for high-power radio frequency applications, operating within the 2.7 GHz to 3.1 GHz frequency range. The device utilizes a 50V supply voltage and delivers an output power of 180W. Key electrical characteristics include a gain of 15 dB and a maximum junction temperature rating of +225°C. The component is packaged in a pill configuration suitable for surface mount technology.

Feature Summary

• Utilizes GaN on SiC technology for high performance
• Designed for high power RF amplification
• Supports surface mount installation

Applications

• Base station power amplification
• Military radar systems
• Electronic warfare equipment

Procurement Notes

Verify the specific suffix against official documentation, as variations may indicate different packaging or revision statuses. Confirm current availability status directly with authorized distributors, as lead times and stock levels fluctuate. Ensure compliance with RoHS directives and check for any recent Product Change Notifications that might affect specifications or manufacturing processes before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the S-band spectrum. Evaluate thermal management requirements carefully due to the high power dissipation capabilities. Ensure the driving circuitry can support the required gate bias conditions. Compare performance metrics against alternative devices if broader bandwidth or lower voltage operation is needed for the specific application architecture.

Part Context

This part belongs to MACOM's GTVA series of GaN HEMTs, which are engineered for demanding RF power applications. The series leverages advanced semiconductor processes to achieve high power density and reliability. These components are integral to modern communication infrastructure, providing robust signal amplification where traditional silicon technologies may fall short in terms of power handling and thermal stability.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and thermal interface requirements when considering cross-references. Ensure that any substitute device meets or exceeds the original electrical specifications and physical dimensions to maintain system integrity without redesigning the PCB layout.