GTVA107001EC-V1-R0

Overview

The GTVA107001EC-V1-R0 is a 700-watt GaN on SiC high electron mobility transistor (HEMT) designed for the DC to 1.4 GHz frequency band. It utilizes H-36248-2 bolt-down flange packaging and operates at a drain voltage of 50 V. The device delivers an output power of 890 W with a typical gain of 18 dB and a drain efficiency of 75% under pulsed CW conditions at 1030 MHz. Key electrical parameters include a drain-source breakdown voltage of 150 V, a gate threshold voltage of -3 V, and a maximum junction temperature of 225 °C.

Feature Summary

• GaN on SiC HEMT technology optimized for high-power RF applications
• Input matched design simplifying circuit integration
• Robust load mismatch tolerance capable of withstanding 10:1 mismatch at 700 W peak power
• ESD protection compliant with Human Body Model Class IC standards

Applications

• Military radar systems
• Electronic warfare platforms
• Communications infrastructure

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package type and shipping quantity. Confirm that the required thermal interface materials and mounting hardware are compatible with the H-36248-2 flange dimensions. Ensure handling procedures strictly adhere to ESD sensitivity guidelines due to the device's classification as an electrostatic discharge sensitive component.

Selection Notes

Select this component when designing amplifiers requiring high output power within the L-band spectrum. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Consider the input matching feature to reduce external component count. Verify that the operating duty cycle and pulse width align with the published performance characteristics to maintain reliability.

Part Context

This part belongs to MACOM's GTVA series of high-power GaN HEMTs. It shares core technology with the GTVA107001FC variant, which utilizes an earless flange package. Both variants target similar military and communications applications but differ in mechanical mounting configurations. The EC designation specifically denotes the H-36248-2 package style.

Replacement Considerations

GTVA107001FC-V1-R0

FAQ

What is the recommended gate quiescent voltage for operation?

The recommended gate quiescent voltage is -3.2 V when the drain-source voltage is 50 V and the drain current is 0.10 A.

Does the device support continuous wave operation?

Yes, the datasheet provides typical performance data for both pulsed CW and continuous wave modes, including small signal gain and input return loss for CW operation.

What is the thermal resistance from junction to case?

The thermal resistance from junction to case is 0.21 °C/W at a case temperature of 85 °C with 334 W dissipation, or 0.25 °C/W at 85 °C with 254 W dissipation using Mode-S signal.