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The GTVA107001FC-V1-R0 is a high-power GaN-on-SiC HEMT designed for the DC to 1.4 GHz frequency band. It utilizes an H-37248-2 earless flange package and operates at a drain voltage of 50 V with a gate-source range of -10 V to +2 V. The device delivers a typical output power of 890 W, achieving a drain efficiency of 75% and a gain of 18 dB at 1030 MHz under pulsed conditions (128 μs pulse width, 10% duty cycle). It features a drain-source breakdown voltage of 150 V and a maximum junction temperature rating of 225 °C.
Verify the specific ordering suffix against the datasheet to confirm the package type. The FC variant corresponds to the H-37248-2 earless flange package, distinct from the EC variant's bolt-down flange. Confirm shipping quantities match the required reel size, as options include 50 or 250 pieces per tape and reel. Ensure handling precautions are followed due to ESD sensitivity.
Select this component for wideband applications requiring high output power within the S-band frequencies. The input matching network reduces external component requirements. Evaluate thermal management capabilities based on the specified thermal resistance values to ensure reliable operation at the target junction temperature. Consider the earless flange package geometry for integration into custom chassis designs.
This part belongs to MACOM's portfolio of high-power RF transistors utilizing Gallium Nitride on Silicon Carbide technology. The GTVA series is engineered for demanding environments where high efficiency and power density are critical. The FC designation specifically identifies the earless flange packaging option within this product family.
GTVA107001EC-V1-R0
The GTVA107001EC uses the H-36248-2 bolt-down flange package, while the GTVA107001FC uses the H-37248-2 earless flange package.
Yes, the datasheet specifies that the device is input matched.
The absolute maximum junction temperature rating is 225 °C.