GTVA107001FC-V1-R0

GTVA107001FC-V1-R0

$1,015.67
  • Description:RF MOSFET HEMT 50V H-37248-2
  • Series:GaN

SKU:6aca6437b0ba Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 50V H-37248-2
  • Series:GaN
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:HEMT
  • Frequency:1.4GHz
  • Gain:20dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:700W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-37248-2
  • Supplier Device Package:H-37248-2
  • Configuration:-

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GTVA107001FC-V1-R0

Overview

The GTVA107001FC-V1-R0 is a high-power GaN-on-SiC HEMT designed for the DC to 1.4 GHz frequency band. It utilizes an H-37248-2 earless flange package and operates at a drain voltage of 50 V with a gate-source range of -10 V to +2 V. The device delivers a typical output power of 890 W, achieving a drain efficiency of 75% and a gain of 18 dB at 1030 MHz under pulsed conditions (128 μs pulse width, 10% duty cycle). It features a drain-source breakdown voltage of 150 V and a maximum junction temperature rating of 225 °C.

Feature Summary

  • GaN on SiC HEMT technology optimized for high power density
  • Input matched configuration simplifies circuit design
  • Robust load mismatch tolerance capable of withstanding 10:1 mismatch at 700 W peak power

Applications

  • Pulsed radar systems
  • Electronic warfare applications
  • High power RF amplification

Procurement Notes

Verify the specific ordering suffix against the datasheet to confirm the package type. The FC variant corresponds to the H-37248-2 earless flange package, distinct from the EC variant's bolt-down flange. Confirm shipping quantities match the required reel size, as options include 50 or 250 pieces per tape and reel. Ensure handling precautions are followed due to ESD sensitivity.

Selection Notes

Select this component for wideband applications requiring high output power within the S-band frequencies. The input matching network reduces external component requirements. Evaluate thermal management capabilities based on the specified thermal resistance values to ensure reliable operation at the target junction temperature. Consider the earless flange package geometry for integration into custom chassis designs.

Part Context

This part belongs to MACOM's portfolio of high-power RF transistors utilizing Gallium Nitride on Silicon Carbide technology. The GTVA series is engineered for demanding environments where high efficiency and power density are critical. The FC designation specifically identifies the earless flange packaging option within this product family.

Replacement Considerations

GTVA107001EC-V1-R0

FAQ

What is the difference between the GTVA107001EC and GTVA107001FC packages?

The GTVA107001EC uses the H-36248-2 bolt-down flange package, while the GTVA107001FC uses the H-37248-2 earless flange package.

Is the device input matched?

Yes, the datasheet specifies that the device is input matched.

What is the maximum junction temperature rating?

The absolute maximum junction temperature rating is 225 °C.

GTVA107001FC-V1-R0GTVA107001FC-V1-R0
$1,015.67
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