GTVA212701FA-V2-R2

Overview

The GTVA212701FA-V2-R2 is a GaN-on-SiC HEMT D-mode amplifier operating in the 2110 to 2200 MHz frequency band. It delivers an output power of 270 W at 48 V bias. The component features input matching, high efficiency, and utilizes a thermally enhanced earless package.

Feature Summary

• Utilizes GaN on SiC HEMT technology for robust performance
• Features integrated input matching for simplified circuit design
• Designed with a thermally enhanced earless package

Applications

• SATCOM Ground Terminals
• RF & Microwave systems
• Broadband communication infrastructure

Procurement Notes

Verify the specific suffix R2 against official MACOM documentation to confirm tape-and-reel packaging configuration. Ensure compatibility with 48 V supply requirements and thermal management solutions suitable for 270 W output power applications before finalizing procurement.

Selection Notes

Select this component for applications requiring high power density in the L-band. The integrated input matching reduces external component count. Verify that the system can accommodate the 48 V bias voltage and provide adequate heat sinking for the earless package to maintain thermal stability during continuous operation.

Part Context

This part belongs to the GTVA series of GaN amplifiers from MACOM Technology Solutions. It represents a high-power solution designed for demanding RF environments. The V2 designation indicates a specific revision within this product family, ensuring updated performance characteristics compared to earlier iterations.

Replacement Considerations

GTVA212701FA-V2-R0 is a confirmed substitute variant within the same family.